{
  "abstract": "In-memory computing requires selector-free operation, low variability, and stable multilevel switching, all of which remain challenging to achieve in a single system. Here, we demonstrate a robust selector-free memory based on a multiferroic BiFeO3 that combines self-compliance with stable bipolar switching, high yield, long endurance, and extended retention. We observe that BiFeO3 memristive crossbar arrays become self-compliant through a naturally formed TiOx interfacial layer, enabling forming-free bipolar switching without external selector devices, addressing major bottlenecks that have limited the practical deployment of resistive memories. The array delivers stable bipolar switching with a 97% device yield, endurance beyond 105 cycles, and data retention exceeding 105 s with low cycle-to-cycle and device-to-device variability. In addition, the devices exhibit 16 well-separated conductance states, enabling 4-bit multilevel operation via precise pulse-controlled programming for digit visualization in edge applications. Noise measurements reveal predominantly 1/f-type behavior with minimal random telegraph noise, indicating robust conductance stability across the programmable window. These results establish BiFeO3 as a practical materials platform for multibit, selector-free crossbar memories offering high reliability, making it well-suited for scalable computing architectures based on functional materials.",
  "abstract_shown": true,
  "affiliations": [],
  "article_type": null,
  "arxiv": "2609.15732",
  "author_total": 8,
  "authors": [
    {
      "name": "Suman Roy"
    },
    {
      "name": "Subhabrata Das"
    },
    {
      "name": "Priyanka Sahu"
    },
    {
      "name": "Majid Ahmadi"
    },
    {
      "name": "Sameer Kumar Mallik"
    },
    {
      "name": "Kaushik Ghosh"
    },
    {
      "name": "Saroj Prasad Dash"
    },
    {
      "name": "Satyaprakash Sahoo"
    }
  ],
  "bibtex": "https://research.draconitic.com/paper/edmhm4t8hjn25.bib",
  "cited_by": 0,
  "doi": "10.48550/arxiv.2609.15732",
  "fulltext_url": null,
  "id": "edmhm4t8hjn25",
  "issns": [],
  "landing_url": "https://arxiv.org/abs/2609.15732",
  "language": null,
  "licence": "LicenseRef-arXiv-nonexclusive-1.0",
  "licence_label": "arXiv licence",
  "licence_source": "article",
  "licence_url": "http://arxiv.org/licenses/nonexclusive-distrib/1.0/",
  "metadata_licence": "CC0-1.0",
  "native_subjects": [
    [
      "arxiv",
      "cond-mat.mes-hall"
    ],
    [
      "openalex",
      "2208|Advanced Memory and Neural Computing"
    ]
  ],
  "openalex": "W7213236647",
  "pdf_url": "https://arxiv.org/pdf/2609.15732",
  "pmcid": null,
  "pmid": null,
  "published": "2026-09-14",
  "publisher": null,
  "ris": "https://research.draconitic.com/paper/edmhm4t8hjn25.ris",
  "sources": [
    {
      "first_seen": "2026-10-30T12:21:25Z",
      "native_id": "2609.15732",
      "source": "arxiv",
      "url": "https://arxiv.org/abs/2609.15732"
    }
  ],
  "subjects": [
    {
      "field": "physics",
      "origin": "arxiv:cond-mat.mes-hall",
      "subfield": "condensed-matter"
    }
  ],
  "title": "A self-compliant selector-free memory with functional bismuth ferrite",
  "title_text": "A self-compliant selector-free memory with functional bismuth ferrite",
  "type": "preprint",
  "updated_at": "2026-10-30T12:21:25Z",
  "url": "https://research.draconitic.com/paper/edmhm4t8hjn25",
  "venue": "arXiv",
  "versions": []
}