{
  "abstract": "This paper reports on the fabrication, physical characterization, and non-linear modeling of 100 nm slanted-gate GaN-on-silicon HEMTs processed using a CMOS-compatible platform. This technology enables state-of-the-art DC and RF performance, with a maximum drain current density of 0.9 A/mm, a peak transconductance of 605 mS/mm, and cut-off frequencies f T = 85 GHz and f max = 220 GHz at V DS = 10 V. Trapping effects investigated via conductance-versus-frequency (G-f) spectroscopy reveal two distinct interface trap populations (D it ~2-3 × 10 13 cm -2 /eV), whose temperature-dependent dynamics deviate from the Shockley-Read-Hall model and are attributed to multiphonon emission and quantum tunneling mechanisms, respectively. An enhanced Angelov-based compact model incorporating dedicated self-heating and current-collapse sub-circuits with capacitances derived directly from measured trap densities is validated through pulsed I-V and loadpull measurements, achieving excellent agreement at 40 GHz with a saturation output power of 24 dBm and a power-added efficiency (PAE) of 51%. These results establish a promising CMOS-compatible GaN-on-Si platform for Ka-band and millimeter-wave power amplifier applications.",
  "abstract_shown": true,
  "affiliations": [],
  "article_type": null,
  "arxiv": null,
  "author_total": 10,
  "authors": [
    {
      "name": "Yassine Fouzi"
    },
    {
      "name": "Martin Doublet"
    },
    {
      "name": "Benjamin Cart"
    },
    {
      "name": "Edouard Lebouvier"
    },
    {
      "name": "Etienne Okada"
    },
    {
      "name": "Erwan Morwan"
    },
    {
      "name": "Yveline Gobil"
    },
    {
      "name": "Fanny Morisot"
    },
    {
      "name": "Khatia Benotmane"
    },
    {
      "name": "Nicolas Defrance"
    }
  ],
  "bibtex": "https://research.draconitic.com/paper/edraqkzn3e9f6.bib",
  "cited_by": 0,
  "doi": "10.3390/electronics15194544",
  "fulltext_url": null,
  "id": "edraqkzn3e9f6",
  "issns": [
    "2079-9292"
  ],
  "landing_url": "https://hal.science/hal-05824829v1",
  "language": "en",
  "licence": "CC-BY-4.0",
  "licence_label": "CC BY 4.0",
  "licence_source": "article",
  "licence_url": "https://creativecommons.org/licenses/by/4.0/",
  "metadata_licence": null,
  "native_subjects": [
    [
      "hal",
      "0.phys"
    ],
    [
      "hal",
      "0.spi"
    ],
    [
      "openalex",
      "3104|GaN-based semiconductor devices and materials"
    ]
  ],
  "openalex": "W7220431941",
  "pdf_url": "https://hal.science/hal-05824829/document",
  "pmcid": null,
  "pmid": null,
  "published": "2026-10-05",
  "publisher": "MDPI",
  "ris": "https://research.draconitic.com/paper/edraqkzn3e9f6.ris",
  "sources": [
    {
      "first_seen": "2026-10-30T12:17:59Z",
      "native_id": "hal-05824829",
      "source": "hal",
      "url": "https://hal.science/hal-05824829v1"
    }
  ],
  "subjects": [
    {
      "field": "physics",
      "origin": "openalex:3104|GaN-based semiconductor devices and materials",
      "subfield": "condensed-matter"
    }
  ],
  "title": "Power Performance of CMOS-Compatible 100 nm Slanted-Gate GaN HEMTs in the Ka-Band",
  "title_text": "Power Performance of CMOS-Compatible 100 nm Slanted-Gate GaN HEMTs in the Ka-Band",
  "type": "peer-reviewed",
  "updated_at": "2026-10-30T12:17:59Z",
  "url": "https://research.draconitic.com/paper/edraqkzn3e9f6",
  "venue": "Electronics",
  "versions": []
}