{
  "abstract": "Au-free ohmic contacts and refractory gate stacks are critical for integrating ultra-wide-bandgap (UWBG) Al-rich AlGaN transistors with Si-CMOS technology. In this work, we demonstrate, to our knowledge, the first complete Au-free metallization platform for Al$_{0.65}$Ga$_{0.35}$N-channel MOS-HEMTs, combining electron-beam-evaporated and sputtered Ti/Al/Ti ohmic contacts with sputtered TiN and Pt gate metals. The Ti/Al/Ti contacts achieved a contact resistance of approximately 7.5--7.7 $Ω\\cdot$mm while being fully Au-free. This contact resistance is achieved using a 600 $^\\circ$C anneal, substantially below the 850--950 $^\\circ$C typically required for Au-capped Ti/Al/X/Au contacts on Al-rich AlGaN, indicating a reduced thermal budget and improved compatibility with silicon-CMOS foundries. TiN gates deliver drain-current density up to 450 mA/mm at $V_{\\mathrm{th}} = -13$ V, whereas Pt gates shift $V_{\\mathrm{th}}$ to -2.5 V with a reduced current drive of 220 mA/mm, reflecting the effects of gate work function. TiN-gated devices exhibit lower current degradation under pulsed operation and a higher critical breakdown field ($E_{\\mathrm{c}} \\approx 3.5$ MV/cm) than Pt-gated devices ($E_{\\mathrm{c}} \\approx 2.98$ MV/cm), measured without field plating at $L_{\\mathrm{GD}} = 2.3$ $μ$m. Collectively, these results establish a low-thermal-budget, fully Au-free, CMOS-compatible metallization platform for high-performance Al-rich AlGaN UWBG power electronics.",
  "abstract_shown": true,
  "affiliations": [],
  "article_type": null,
  "arxiv": "2610.40993",
  "author_total": 11,
  "authors": [
    {
      "name": "Mafruda Rahman"
    },
    {
      "name": "Dharun Manoharan"
    },
    {
      "name": "Tariq Jamil"
    },
    {
      "name": "Abdullah Al Mamun Mazumder"
    },
    {
      "name": "Muhammad Ali"
    },
    {
      "name": "Anthony Joyce"
    },
    {
      "name": "Chandan Joishi"
    },
    {
      "name": "James G. Fiorenza"
    },
    {
      "name": "Manoj Kumar Chandra Mohan"
    },
    {
      "name": "Grigory Simin"
    },
    {
      "name": "Asif Khan"
    }
  ],
  "bibtex": "https://research.draconitic.com/paper/f1a9h9933qn7k.bib",
  "cited_by": 0,
  "doi": "10.48550/arxiv.2610.40993",
  "fulltext_url": null,
  "id": "f1a9h9933qn7k",
  "issns": [],
  "landing_url": "https://arxiv.org/abs/2610.40993",
  "language": null,
  "licence": "LicenseRef-arXiv-nonexclusive-1.0",
  "licence_label": "arXiv licence",
  "licence_source": "article",
  "licence_url": "http://arxiv.org/licenses/nonexclusive-distrib/1.0/",
  "metadata_licence": "CC0-1.0",
  "native_subjects": [
    [
      "arxiv",
      "physics.app-ph"
    ]
  ],
  "openalex": null,
  "pdf_url": "https://arxiv.org/pdf/2610.40993",
  "pmcid": null,
  "pmid": null,
  "published": "2026-10-29",
  "publisher": null,
  "ris": "https://research.draconitic.com/paper/f1a9h9933qn7k.ris",
  "sources": [
    {
      "first_seen": "2026-11-02T12:21:15Z",
      "native_id": "2610.40993",
      "source": "arxiv",
      "url": "https://arxiv.org/abs/2610.40993"
    }
  ],
  "subjects": [
    {
      "field": "physics",
      "origin": "arxiv:physics.app-ph",
      "subfield": "applied-instrumentation"
    }
  ],
  "title": "Complete Au-free Metallization Platform for UWBG Al$_{0.65}$Ga$_{0.35}$N channel MOS-HEMTs using Ti/Al/Ti Ohmic Contacts and Refractory TiN/Pt Gates",
  "title_text": "Complete Au-free Metallization Platform for UWBG Al_0.65Ga_0.35N channel MOS-HEMTs using Ti/Al/Ti Ohmic Contacts and Refractory TiN/Pt Gates",
  "type": "preprint",
  "updated_at": "2026-11-04T15:20:51Z",
  "url": "https://research.draconitic.com/paper/f1a9h9933qn7k",
  "venue": "arXiv",
  "versions": []
}