{
  "abstract": "The presence of defect complexes, namely the VN-VGa divacancy, in metal-organic vapor phase epitaxy grown GaN systems translates into device degradation with severe consequences particularly important in power electronics applications. To get an insight into the behavior of this type of defects, we resort to long-lasting first principles simulations to characterize the dynamical behavior and underlying electronic structure of VN-VGa divacancies at the experimental temperature used to produce GaN. We evidence a peculiar mechanism, triggered by temperature, in which the diffusion of a Ga atom around the divacancy promotes the displacement of the defect and a switching mechanism, not accompanied by N atoms diffusion. These processes, occurring below the surface layer, do not affect the surface growth reactions such as the uptake and binding of an NH2 moiety, thus being of negligible importance for the epitaxy of the material. The divacancy can switch from different configurations, co-planar or involving two adjacent layers below the (0001) surface, generating persistent gap states that can become charge trap centers.",
  "abstract_shown": true,
  "affiliations": [],
  "article_type": null,
  "arxiv": null,
  "author_total": 4,
  "authors": [
    {
      "name": "Kana Ishisone"
    },
    {
      "name": "Akira Kusaba"
    },
    {
      "name": "Yoshihiro Kangawa"
    },
    {
      "name": "Mauro Boero"
    }
  ],
  "bibtex": "https://research.draconitic.com/paper/fa38fhvy91k9h.bib",
  "cited_by": 0,
  "doi": "10.1016/j.apsusc.2026.168722",
  "fulltext_url": null,
  "id": "fa38fhvy91k9h",
  "issns": [
    "0169-4332",
    "1873-5584"
  ],
  "landing_url": "https://hal.science/hal-05836219v1",
  "language": "en",
  "licence": "CC-BY-NC-ND-4.0",
  "licence_label": "CC BY-NC-ND 4.0",
  "licence_source": "article",
  "licence_url": "https://creativecommons.org/licenses/by-nc-nd/4.0/",
  "metadata_licence": null,
  "native_subjects": [
    [
      "hal",
      "0.chim"
    ],
    [
      "hal",
      "0.phys"
    ],
    [
      "hal",
      "0.spi"
    ],
    [
      "openalex",
      "3104|GaN-based semiconductor devices and materials"
    ]
  ],
  "openalex": "W7223037142",
  "pdf_url": "https://hal.science/hal-05836219/document",
  "pmcid": null,
  "pmid": null,
  "published": "2026-10-20",
  "publisher": "Elsevier",
  "ris": "https://research.draconitic.com/paper/fa38fhvy91k9h.ris",
  "sources": [
    {
      "first_seen": "2026-10-30T12:18:01Z",
      "native_id": "hal-05836219",
      "source": "hal",
      "url": "https://hal.science/hal-05836219v1"
    }
  ],
  "subjects": [
    {
      "field": "physics",
      "origin": "openalex:3104|GaN-based semiconductor devices and materials",
      "subfield": "condensed-matter"
    }
  ],
  "title": "Role and dynamical evolution of intrinsic divacancies in the growth process of epitaxial GaN",
  "title_text": "Role and dynamical evolution of intrinsic divacancies in the growth process of epitaxial GaN",
  "type": "peer-reviewed",
  "updated_at": "2026-10-30T12:18:01Z",
  "url": "https://research.draconitic.com/paper/fa38fhvy91k9h",
  "venue": "Applied Surface Science",
  "versions": []
}