{
  "abstract": "Ferroelectric semiconductors are promising for multifunctional electronics, yet their typically low carrier mobilities remain a major limitation. Using first-principles phonon-limited transport calculations for monolayer In$_2$Se$_3$, we show that this limitation depends critically on the microscopic origin of ferroelectricity. In displacive $β'$-In$_2$Se$_3$, low-frequency ferroelectric modes dominate carrier scattering, with additional contributions from longitudinal-optical (LO) phonons, limiting the room-temperature electron mobility to a few cm$^2$/(V s). By contrast, in fractional-quantum ferroelectric $α$-In$_2$Se$_3$, ferroelectric-mode scattering is absent because polarization arises from discrete lattice-scale atomic displacements rather than soft-mode condensation. Transport is therefore dominated by LO phonons, yielding a room-temperature mobility above 70 cm$^2$/(V s). Carrier doping further screens long-range electron-LO-phonon interactions and raises the mobility beyond 300 cm$^2$/(V s) at experimentally accessible densities. These results establish that fractional-quantum ferroelectricity can decouple robust polarization from strong intrinsic carrier scattering, offering a route toward high-mobility ferroelectric semiconductors.",
  "abstract_shown": true,
  "affiliations": [],
  "article_type": null,
  "arxiv": "2609.16799",
  "author_total": 4,
  "authors": [
    {
      "name": "Rong-Tian Pang"
    },
    {
      "name": "Wenjie Hu"
    },
    {
      "name": "Youning Liu"
    },
    {
      "name": "Jin-Jian Zhou"
    }
  ],
  "bibtex": "https://research.draconitic.com/paper/fgt1zmqpp8ek7.bib",
  "cited_by": 0,
  "doi": "10.48550/arxiv.2609.16799",
  "fulltext_url": null,
  "id": "fgt1zmqpp8ek7",
  "issns": [],
  "landing_url": "https://arxiv.org/abs/2609.16799",
  "language": null,
  "licence": "LicenseRef-arXiv-nonexclusive-1.0",
  "licence_label": "arXiv licence",
  "licence_source": "article",
  "licence_url": "http://arxiv.org/licenses/nonexclusive-distrib/1.0/",
  "metadata_licence": "CC0-1.0",
  "native_subjects": [
    [
      "arxiv",
      "cond-mat.mtrl-sci"
    ]
  ],
  "openalex": null,
  "pdf_url": "https://arxiv.org/pdf/2609.16799",
  "pmcid": null,
  "pmid": null,
  "published": "2026-09-15",
  "publisher": null,
  "ris": "https://research.draconitic.com/paper/fgt1zmqpp8ek7.ris",
  "sources": [
    {
      "first_seen": "2026-10-30T12:21:41Z",
      "native_id": "2609.16799",
      "source": "arxiv",
      "url": "https://arxiv.org/abs/2609.16799"
    }
  ],
  "subjects": [
    {
      "field": "physics",
      "origin": "arxiv:cond-mat.mtrl-sci",
      "subfield": "condensed-matter"
    }
  ],
  "title": "Fractional-Quantum Ferroelectrics: A Route to High-Mobility Ferroelectric Semiconductors",
  "title_text": "Fractional-Quantum Ferroelectrics: A Route to High-Mobility Ferroelectric Semiconductors",
  "type": "preprint",
  "updated_at": "2026-10-30T12:21:41Z",
  "url": "https://research.draconitic.com/paper/fgt1zmqpp8ek7",
  "venue": "arXiv",
  "versions": []
}