{
  "abstract": "Near-surface bismuth donors are promising for silicon quantum devices because of their rich electron-nuclear spin structure and long spin coherence, but their electrical activation is strongly influenced by implantation-induced amorphization. We compare redistribution and electrical activation of 20 keV Bi implanted directly into Si and after Si preamorphization. The two routes produce amorphous-layer depths of approximately 47 nm and 177 +/- 15 nm, respectively. After annealing at 650 C for 300 s, Rutherford backscattering spectrometry and channeling reveal comparable substitutional Bi fractions of 91 +/- 2% and 89 +/- 4%, whereas Hall measurements indicate Hall-derived electrical activation yields of approximately 60% and 90%, respectively. Depth-resolved ion-scattering analysis reveals a buried Bi-related feature at or beyond the initial amorphous/crystalline interface, within the end-of-range region, together with increasing surface segregation at higher annealing temperatures. The buried feature is consistent with trapping near residual end-of-range defects. X-ray photoelectron spectroscopy and low-temperature photoluminescence on the Bi-only sample reveal no resolvable Bi-oxide contribution and a donor-related optical signature, respectively. These results show that amorphization depth and regrowth geometry govern Bi redistribution and influence electrical activation beyond substitutional incorporation alone.",
  "abstract_shown": true,
  "affiliations": [],
  "article_type": null,
  "arxiv": "2610.35993",
  "author_total": 5,
  "authors": [
    {
      "name": "Youcef A. Bioud"
    },
    {
      "name": "Simon-Jean Michel"
    },
    {
      "name": "Sebastien Francoeur"
    },
    {
      "name": "Sjoerd Roorda"
    },
    {
      "name": "Eva Dupont-Ferrier"
    }
  ],
  "bibtex": "https://research.draconitic.com/paper/fqemxhcwqqxv0.bib",
  "cited_by": 0,
  "doi": "10.48550/arxiv.2610.35993",
  "fulltext_url": null,
  "id": "fqemxhcwqqxv0",
  "issns": [],
  "landing_url": "https://arxiv.org/abs/2610.35993",
  "language": null,
  "licence": "CC-BY-4.0",
  "licence_label": "CC BY 4.0",
  "licence_source": "article",
  "licence_url": "http://creativecommons.org/licenses/by/4.0/",
  "metadata_licence": "CC0-1.0",
  "native_subjects": [
    [
      "arxiv",
      "cond-mat.mtrl-sci"
    ],
    [
      "arxiv",
      "physics.app-ph"
    ],
    [
      "arxiv",
      "quant-ph"
    ],
    [
      "openalex",
      "3107|Semiconductor materials and interfaces"
    ]
  ],
  "openalex": "W7224094171",
  "pdf_url": "https://arxiv.org/pdf/2610.35993",
  "pmcid": null,
  "pmid": null,
  "published": "2026-10-26",
  "publisher": null,
  "ris": "https://research.draconitic.com/paper/fqemxhcwqqxv0.ris",
  "sources": [
    {
      "first_seen": "2026-10-30T12:35:50Z",
      "native_id": "2610.35993",
      "source": "arxiv",
      "url": "https://arxiv.org/abs/2610.35993"
    }
  ],
  "subjects": [
    {
      "field": "physics",
      "origin": "arxiv:physics.app-ph",
      "subfield": "applied-instrumentation"
    },
    {
      "field": "physics",
      "origin": "arxiv:cond-mat.mtrl-sci",
      "subfield": "condensed-matter"
    },
    {
      "field": "physics",
      "origin": "arxiv:quant-ph",
      "subfield": "quantum"
    }
  ],
  "title": "Amorphization-Depth-Dependent Bismuth Redistribution and Activation in Silicon for Quantum Devices",
  "title_text": "Amorphization-Depth-Dependent Bismuth Redistribution and Activation in Silicon for Quantum Devices",
  "type": "preprint",
  "updated_at": "2026-10-30T12:35:50Z",
  "url": "https://research.draconitic.com/paper/fqemxhcwqqxv0",
  "venue": "arXiv",
  "versions": []
}