{
  "abstract": "The development of high-performance p-type monolayer transistors is critical for extending two-dimensional (2D) semiconductors beyond silicon in sub 1-nm technology nodes for complementary metal–oxide–semiconductor (CMOS) circuits. However, insufficient doping and metal-induced gap states (MIGS) during metal deposition lead to high contact resistance, greatly limiting p-type on-state currents. Here, we demonstrate high-performance ballistic p-type monolayer tungsten diselenide (WSe ₂ ) transistors by oxygen p-doping. The controllable oxygen doping greatly reduces the number of Se vacancy defects in as-grown WSe ₂ , and thus increases the hole mobility from 55 to 218.3 cm ² V ⁻¹ s ⁻¹ —approaching the theoretical limit. Moreover, this approach also induces a heavily hole-doped contact region in p-type monolayer WSe ₂ devices and decreases the contact resistance from 1869 Ω·μm down to 104 Ω·μm. Consequently, a 16-nm-channel WSe ₂ p-type field effect transistor (pFET) delivers a saturation current of up to 1635 μA μm ⁻¹ at a drain voltage of −1.2 V and a ballistic ratio as high as 81% at room temperature.",
  "abstract_shown": true,
  "affiliations": [],
  "article_type": "research article",
  "arxiv": null,
  "author_total": 13,
  "authors": [
    {
      "name": "Lei Sun",
      "orcid": "0000-0002-4138-2645"
    },
    {
      "name": "Tingting Gao"
    },
    {
      "name": "Lin Xu",
      "orcid": "0000-0003-1781-1638"
    },
    {
      "name": "Wanying Li"
    },
    {
      "name": "Chuanqi Zhang"
    },
    {
      "name": "Zhengyu Zhang"
    },
    {
      "name": "Kian Ping Loh",
      "orcid": "0000-0002-1491-743X"
    },
    {
      "name": "Yuhui He",
      "orcid": "0000-0002-0546-7692"
    },
    {
      "name": "Kaustav Banerjee",
      "orcid": "0000-0001-5344-0921"
    },
    {
      "name": "Yang Chai",
      "orcid": "0000-0002-8943-0861"
    },
    {
      "name": "Lain-Jong Li",
      "orcid": "0000-0002-4059-7783"
    },
    {
      "name": "Xiangshui Miao",
      "orcid": "0000-0002-3999-7421"
    },
    {
      "name": "Xuefei Li",
      "orcid": "0000-0001-6406-6461"
    }
  ],
  "bibtex": "https://research.draconitic.com/paper/fsk43gfq9mejt.bib",
  "cited_by": 0,
  "doi": "10.1038/s41467-026-78157-w",
  "fulltext_url": "https://europepmc.org/articles/PMC13720060",
  "id": "fsk43gfq9mejt",
  "issns": [
    "2041-1723"
  ],
  "landing_url": "https://www.nature.com/articles/s41467-026-78157-w",
  "language": "eng",
  "licence": "CC-BY-4.0",
  "licence_label": "CC BY 4.0",
  "licence_source": "article",
  "licence_url": "https://creativecommons.org/licenses/by/4.0",
  "metadata_licence": null,
  "native_subjects": [
    [
      "heading",
      "Article"
    ],
    [
      "openalex",
      "2505|2D Materials and Applications"
    ]
  ],
  "openalex": "W7215128346",
  "pdf_url": "https://www.nature.com/articles/s41467-026-78157-w.pdf",
  "pmcid": "PMC13720060",
  "pmid": "42957729",
  "published": "2026-10-01",
  "publisher": "Springer Science and Business Media LLC",
  "ris": "https://research.draconitic.com/paper/fsk43gfq9mejt.ris",
  "sources": [
    {
      "first_seen": "2026-10-30T12:17:38Z",
      "native_id": "10.1038/s41467-026-78157-w",
      "source": "crossref",
      "url": "https://www.nature.com/articles/s41467-026-78157-w"
    },
    {
      "first_seen": "2026-11-01T00:20:44Z",
      "native_id": "MED:42957729",
      "source": "europepmc",
      "url": "https://europepmc.org/article/MED/42957729"
    },
    {
      "first_seen": "2026-11-02T12:23:55Z",
      "native_id": "PMC13720060",
      "source": "pmc",
      "url": "https://doi.org/10.1038/s41467-026-78157-w"
    }
  ],
  "subjects": [
    {
      "field": "chemistry",
      "origin": "openalex:2505|2D Materials and Applications",
      "subfield": "materials-polymers"
    }
  ],
  "title": "Low contact resistance and high current density in ballistic p-type transistors based on oxygen-doped WSe2 monolayers",
  "title_text": "Low contact resistance and high current density in ballistic p-type transistors based on oxygen-doped WSe2 monolayers",
  "type": "peer-reviewed",
  "updated_at": "2026-11-03T12:21:00Z",
  "url": "https://research.draconitic.com/paper/fsk43gfq9mejt",
  "venue": "Nature Communications",
  "versions": []
}