{
  "abstract": "Disorder can localize valence- and conduction-band states to different degrees, yet whether such localization contrast has observable consequences remains poorly understood. Here, we show that localization contrast strongly impacts competing carrier-recombination channels. We illustrate this behavior in random In$_x$Ga$_{1-x}$N alloys. Increasing the In content from $x=13.5\\%$ to $x=22\\%$ progressively localizes the valence-band maximum state while leaving the conduction-band minimum state comparatively delocalized. This contrasting localization decreases the interband optical momentum matrix element underlying radiative recombination. For Auger-Meitner recombination, however, localization alone does not determine the coupling; atomic-scale disorder also breaks primitive-cell translational symmetry and modifies the momentum-space and phase structure of the states. This generates additional low-$Q$ components and enhances the Auger coupling by more than five orders of magnitude relative to pristine GaN. Thus, we provide a microscopic explanation for the competing trends in radiative and Auger recombination. More broadly, our results establish localization contrast as a mechanism through which disorder can control optical and carrier-carrier interactions in semiconductors.",
  "abstract_shown": true,
  "affiliations": [],
  "article_type": null,
  "arxiv": "2610.30741",
  "author_total": 6,
  "authors": [
    {
      "name": "Arsineh Apelian"
    },
    {
      "name": "Tanay Tak"
    },
    {
      "name": "Xuance Jiang"
    },
    {
      "name": "Tsung-Yin Tsai"
    },
    {
      "name": "James S. Speck"
    },
    {
      "name": "Vojtech Vlcek"
    }
  ],
  "bibtex": "https://research.draconitic.com/paper/ft1tqc03n1kqk.bib",
  "cited_by": 0,
  "doi": "10.48550/arxiv.2610.30741",
  "fulltext_url": null,
  "id": "ft1tqc03n1kqk",
  "issns": [],
  "landing_url": "https://arxiv.org/abs/2610.30741",
  "language": null,
  "licence": "CC-BY-4.0",
  "licence_label": "CC BY 4.0",
  "licence_source": "article",
  "licence_url": "http://creativecommons.org/licenses/by/4.0/",
  "metadata_licence": "CC0-1.0",
  "native_subjects": [
    [
      "arxiv",
      "cond-mat.dis-nn"
    ],
    [
      "arxiv",
      "physics.app-ph"
    ],
    [
      "openalex",
      "3104|GaN-based semiconductor devices and materials"
    ]
  ],
  "openalex": "W7223334794",
  "pdf_url": "https://arxiv.org/pdf/2610.30741",
  "pmcid": null,
  "pmid": null,
  "published": "2026-10-24",
  "publisher": null,
  "ris": "https://research.draconitic.com/paper/ft1tqc03n1kqk.ris",
  "sources": [
    {
      "first_seen": "2026-10-30T12:35:35Z",
      "native_id": "2610.30741",
      "source": "arxiv",
      "url": "https://arxiv.org/abs/2610.30741"
    }
  ],
  "subjects": [
    {
      "field": "physics",
      "origin": "arxiv:physics.app-ph",
      "subfield": "applied-instrumentation"
    },
    {
      "field": "physics",
      "origin": "arxiv:cond-mat.dis-nn",
      "subfield": "condensed-matter"
    }
  ],
  "title": "Localization Contrast As a Fundamental Limit of Radiative Quantum Efficiency",
  "title_text": "Localization Contrast As a Fundamental Limit of Radiative Quantum Efficiency",
  "type": "preprint",
  "updated_at": "2026-10-30T12:35:35Z",
  "url": "https://research.draconitic.com/paper/ft1tqc03n1kqk",
  "venue": "arXiv",
  "versions": []
}