{
  "abstract": "We report cryogenic characterization and compact modeling of GlobalFoundries (GF) 12LP regular-voltage-threshold (RVT) n- and p-FinFETs, measured from 292 K to 10 mK. Both devices retain sub-Kelvin gate control without carrier freeze-out, with the n-type device exhibiting an intrinsic sub-threshold slope (SS) floor of 24.8 mV/dec. To bypass high on-chip series routing resistance that confounds peak-gm extraction, we adopt a fixed-current (3.26 uA/um) methodology. These low-current metrics inform a continuous 1.36 K to 292 K compact model using dynamic parameter injection, preserving room-temperature process development kit (PDK) qualification.",
  "abstract_shown": true,
  "affiliations": [],
  "article_type": null,
  "arxiv": "2609.11963",
  "author_total": 6,
  "authors": [
    {
      "name": "DaKyung Lee"
    },
    {
      "name": "Liyang Jin"
    },
    {
      "name": "Jungmin Lee"
    },
    {
      "name": "Rohit Rangaraj"
    },
    {
      "name": "Linbo Shao"
    },
    {
      "name": "Jeffrey S. Walling"
    }
  ],
  "bibtex": "https://research.draconitic.com/paper/fxtjqq9p7k8br.bib",
  "cited_by": 0,
  "doi": "10.48550/arxiv.2609.11963",
  "fulltext_url": null,
  "id": "fxtjqq9p7k8br",
  "issns": [],
  "landing_url": "https://arxiv.org/abs/2609.11963",
  "language": null,
  "licence": "CC-BY-4.0",
  "licence_label": "CC BY 4.0",
  "licence_source": "article",
  "licence_url": "http://creativecommons.org/licenses/by/4.0/",
  "metadata_licence": "CC0-1.0",
  "native_subjects": [
    [
      "arxiv",
      "physics.gen-ph"
    ],
    [
      "openalex",
      "2208|Advancements in Semiconductor Devices and Circuit Design"
    ]
  ],
  "openalex": "W7212656671",
  "pdf_url": "https://arxiv.org/pdf/2609.11963",
  "pmcid": null,
  "pmid": null,
  "published": "2026-09-01",
  "publisher": null,
  "ris": "https://research.draconitic.com/paper/fxtjqq9p7k8br.ris",
  "sources": [
    {
      "first_seen": "2026-10-30T12:21:07Z",
      "native_id": "2609.11963",
      "source": "arxiv",
      "url": "https://arxiv.org/abs/2609.11963"
    }
  ],
  "subjects": [
    {
      "field": "physics",
      "origin": "arxiv:physics.gen-ph",
      "subfield": "general"
    }
  ],
  "title": "12 nm FinFETs from 292 K to 10 mK: Characterization and a Temperature-Continuous Compact Model for Qubit Control",
  "title_text": "12 nm FinFETs from 292 K to 10 mK: Characterization and a Temperature-Continuous Compact Model for Qubit Control",
  "type": "preprint",
  "updated_at": "2026-10-30T12:21:07Z",
  "url": "https://research.draconitic.com/paper/fxtjqq9p7k8br",
  "venue": "arXiv",
  "versions": []
}