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Peer-reviewedCC BY 4.0Physical Review Applied

Enhancement of perpendicular magnetic anisotropy and Dzyaloshinskii-Moriya interaction in cobalt-based systems through interfacial engineering

  • M. Belmeguenai
  • T. Al Maawali
  • A. Bendjaballah
  • W. Fotso
  • M. G. Hafiz
  • M. Ramu
  • S. M. Chérif
  • N. Tiercelin
  • M. S. Gabor
  • Y. Roussigné
  • S. N. Piramanayagam
  • R. Sbiaa
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Abstract

Interfacial engineering provides an effective route to tailor chiral magnetic interactions in thin-film heterostructures relevant for spintronic applications. In this work, we investigate the influence of top capping layers on perpendicular magnetic anisotropy (PMA) and interfacial Dzyaloshinskii-Moriya interaction (iDMI) in ultrathin Co films. By depositing Ru, Ta, W, and Pt on a 1.7 nm Co layer, we selectively modify the top interface while preserving the intrinsic growth of the ferromagnetic layer. Ferromagnetic resonance, Brillouin light scattering, vibrating sample magnetometry, and magneto-optical Kerr effect measurements are used to quantify the magnetic anisotropy and chiral exchange. We find that Ta capping yields a strong PMA, leading to perpendicular, spontaneously oriented magnetization and an iDMI of −1.23⁢ pJ/m , exceeding that obtained with W. In contrast, Ru and Pt capping layers lead to in-plane and canted magnetization spontaneously, respectively. The large PMA observed in Ta-capped films allows increased Co thickness while maintaining perpendicular anisotropy, which is expected to enhance spin polarization. These results demonstrate that top-interface engineering enables simultaneous tuning of magnetic anisotropy and iDMI, providing a practical pathway toward the design of magnetic tunnel junctions incorporating stabilized skyrmions.

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Cite

BibTeXRIS
BibTeX
@article{belmeguenai2026enhancement,
  title = {{Enhancement of perpendicular magnetic anisotropy and Dzyaloshinskii-Moriya interaction in cobalt-based systems through interfacial engineering}},
  author = {M. Belmeguenai and T. Al Maawali and A. Bendjaballah and W. Fotso and M. G. Hafiz and M. Ramu and S. M. Chérif and N. Tiercelin and M. S. Gabor and Y. Roussigné and S. N. Piramanayagam and R. Sbiaa},
  journal = {Physical Review Applied},
  year = {2026},
  month = oct,
  doi = {10.1103/pz1p-3rh1},
  url = {https://hal.science/hal-05836412v1},
  note = {CC BY 4.0},
}
RIS
TY  - JOUR
TI  - Enhancement of perpendicular magnetic anisotropy and Dzyaloshinskii-Moriya interaction in cobalt-based systems through interfacial engineering
AU  - M. Belmeguenai
AU  - T. Al Maawali
AU  - A. Bendjaballah
AU  - W. Fotso
AU  - M. G. Hafiz
AU  - M. Ramu
AU  - S. M. Chérif
AU  - N. Tiercelin
AU  - M. S. Gabor
AU  - Y. Roussigné
AU  - S. N. Piramanayagam
AU  - R. Sbiaa
PY  - 2026
DA  - 2026/10/09
JO  - Physical Review Applied
DO  - 10.1103/pz1p-3rh1
UR  - https://hal.science/hal-05836412v1
AB  - Interfacial engineering provides an effective route to tailor chiral magnetic interactions in thin-film heterostructures relevant for spintronic applications. In this work, we investigate the influence of top capping layers on perpendicular magnetic anisotropy (PMA) and interfacial Dzyaloshinskii-Moriya interaction (iDMI) in ultrathin Co films. By depositing Ru, Ta, W, and Pt on a 1.7 nm Co layer, we selectively modify the top interface while preserving the intrinsic growth of the ferromagnetic layer. Ferromagnetic resonance, Brillouin light scattering, vibrating sample magnetometry, and magneto-optical Kerr effect measurements are used to quantify the magnetic anisotropy and chiral exchange. We find that Ta capping yields a strong PMA, leading to perpendicular, spontaneously oriented magnetization and an iDMI of −1.23⁢ pJ/m , exceeding that obtained with W. In contrast, Ru and Pt capping layers lead to in-plane and canted magnetization spontaneously, respectively. The large PMA observed in Ta-capped films allows increased Co thickness while maintaining perpendicular anisotropy, which is expected to enhance spin polarization. These results demonstrate that top-interface engineering enables simultaneous tuning of magnetic anisotropy and iDMI, providing a practical pathway toward the design of magnetic tunnel junctions incorporating stabilized skyrmions.
SN  - 2331-7019
ER  -