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Peer-reviewedCC BYApplied microscopy

Monolithic fabrication of 1S1R cross-point device using single GexTe1-x material by controlling composition between memory and threshold switching

  • Young-Min Kim1
  • Sang-Heon Park1
  • Jihye Lee1
  • Sangyeop Kim1
  • Siwon Park1
  • Jong-Souk Yeo1
  1. 185, Songdogwahak-Ro, Incheon, Yeonsu-Gu 21983 Republic of Korea
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Cite

BibTeXRIS
BibTeX
@article{kim2026monolithic,
  title = {{Monolithic fabrication of 1S1R cross-point device using single GexTe1-x material by controlling composition between memory and threshold switching}},
  author = {Young-Min Kim and Sang-Heon Park and Jihye Lee and Sangyeop Kim and Siwon Park and Jong-Souk Yeo},
  journal = {Applied microscopy},
  year = {2026},
  month = oct,
  url = {https://europepmc.org/article/PMC/PMC13669274},
  note = {CC BY},
}
RIS
TY  - JOUR
TI  - Monolithic fabrication of 1S1R cross-point device using single GexTe1-x material by controlling composition between memory and threshold switching
AU  - Young-Min Kim
AU  - Sang-Heon Park
AU  - Jihye Lee
AU  - Sangyeop Kim
AU  - Siwon Park
AU  - Jong-Souk Yeo
PY  - 2026
DA  - 2026/10/14
JO  - Applied microscopy
UR  - https://europepmc.org/article/PMC/PMC13669274
SN  - 2287-5123
SN  - 2287-4445
ER  -