Switchable Magnetoelectric Transport in Graphene via a Van der Waals Multiferroic

Abstract

Electric and magnetic control of transport properties at atomic interfaces is central to the development of next generation electronics and spintronics. Van der Waals multiferroics materials that simultaneously host dielectric and magnetic orders down to the monolayer limit offer a promising platform for such interfacial control, yet the realization of electronic functionalities that exploit the unique attributes of van der Waals multiferroics has largely remained elusive. Here, we realize a van der Waals heterostructure comprising graphene and the multiferroic CuCrP2S6, enabling gate-switchable magnetoelectric transport in graphene, mediated by the multiferroic layer. The charge-neutrality resistance peak of graphene exhibits pronounced hysteresis arising from polarization flip in the multiferroic state. Application of an in-plane magnetic field shifts this peak in a polarization-dependent manner, revealing magnetic-field-induced polarization modulation a direct signature of the magnetoelectric effect. Furthermore, cooling the device under an applied electric field enables domain control of the multiferroic order, allowing reversible switching of the interfacial magnetoelectric transport. These results provide the first demonstration of interfacial magnetoelectric transport in a vdW heterostructure, and establish a pathway for engineering two-dimensional van der Waals interfaces for functional device applications.

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Cite

BibTeX RIS

BibTeX

@misc{tanaka2026switchable,
  title = {{Switchable Magnetoelectric Transport in Graphene via a Van der Waals Multiferroic}},
  author = {Miuko Tanaka and Shunta Aoki and Ikoi Sato and Hao Ou and Itishree Pradhan and Ngoc Han Tu and Yangsong Chen and Tomohiro Ishii and Kenji Watanabe and Takashi Taniguchi and Michihisa Yamamoto and Masayuki Hashisaka and Jiang Pu and Naoki Ogawa and Toshiya Ideue},
  howpublished = {arXiv},
  year = {2026},
  month = aug,
  doi = {10.48550/arxiv.2608.30170},
  eprint = {2608.30170},
  archivePrefix = {arXiv},
  url = {https://arxiv.org/abs/2608.30170},
}

RIS

TY  - UNPB
TI  - Switchable Magnetoelectric Transport in Graphene via a Van der Waals Multiferroic
AU  - Miuko Tanaka
AU  - Shunta Aoki
AU  - Ikoi Sato
AU  - Hao Ou
AU  - Itishree Pradhan
AU  - Ngoc Han Tu
AU  - Yangsong Chen
AU  - Tomohiro Ishii
AU  - Kenji Watanabe
AU  - Takashi Taniguchi
AU  - Michihisa Yamamoto
AU  - Masayuki Hashisaka
AU  - Jiang Pu
AU  - Naoki Ogawa
AU  - Toshiya Ideue
PY  - 2026
DA  - 2026/08/31
PB  - arXiv
DO  - 10.48550/arxiv.2608.30170
UR  - https://arxiv.org/abs/2608.30170
AB  - Electric and magnetic control of transport properties at atomic interfaces is central to the development of next generation electronics and spintronics. Van der Waals multiferroics materials that simultaneously host dielectric and magnetic orders down to the monolayer limit offer a promising platform for such interfacial control, yet the realization of electronic functionalities that exploit the unique attributes of van der Waals multiferroics has largely remained elusive. Here, we realize a van der Waals heterostructure comprising graphene and the multiferroic CuCrP2S6, enabling gate-switchable magnetoelectric transport in graphene, mediated by the multiferroic layer. The charge-neutrality resistance peak of graphene exhibits pronounced hysteresis arising from polarization flip in the multiferroic state. Application of an in-plane magnetic field shifts this peak in a polarization-dependent manner, revealing magnetic-field-induced polarization modulation a direct signature of the magnetoelectric effect. Furthermore, cooling the device under an applied electric field enables domain control of the multiferroic order, allowing reversible switching of the interfacial magnetoelectric transport. These results provide the first demonstration of interfacial magnetoelectric transport in a vdW heterostructure, and establish a pathway for engineering two-dimensional van der Waals interfaces for functional device applications.
ER  -

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