Tuneable terahertz transitions in zigzag graphene nanoribbons
Abstract
We show that a transverse electric field applied to a zigzag graphene nanoribbon opens a band gap whose energy can be tuned through the terahertz (THz) range. The field breaks the reflection symmetry of the ribbon, allowing optical transitions that are forbidden in its absence. The relative strengths of transitions polarized parallel and transverse to the ribbon depend strongly on excitation frequency and become equal at a particular frequency. At this frequency, each helicity selectively excites carriers in only one of the two field-induced edge-state valleys, with the selected valley reversed for the opposite helicity. Since this excitation occurs away from the valley minima, the photoexcited carriers have finite group velocity, giving rise to a circular photogalvanic response. Van Hove singularities enhance radiative recombination at the band edge, providing a route towards compact, tunable THz emitters.
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BibTeX
@misc{hartmann2026tuneable,
title = {{Tuneable terahertz transitions in zigzag graphene nanoribbons}},
author = {R. R. Hartmann and M. E. Portnoi},
howpublished = {arXiv},
year = {2026},
month = sep,
doi = {10.48550/arxiv.2609.18340},
eprint = {2609.18340},
archivePrefix = {arXiv},
url = {https://arxiv.org/abs/2609.18340},
note = {CC BY 4.0},
}
RIS
TY - UNPB
TI - Tuneable terahertz transitions in zigzag graphene nanoribbons
AU - R. R. Hartmann
AU - M. E. Portnoi
PY - 2026
DA - 2026/09/16
PB - arXiv
DO - 10.48550/arxiv.2609.18340
UR - https://arxiv.org/abs/2609.18340
AB - We show that a transverse electric field applied to a zigzag graphene nanoribbon opens a band gap whose energy can be tuned through the terahertz (THz) range. The field breaks the reflection symmetry of the ribbon, allowing optical transitions that are forbidden in its absence. The relative strengths of transitions polarized parallel and transverse to the ribbon depend strongly on excitation frequency and become equal at a particular frequency. At this frequency, each helicity selectively excites carriers in only one of the two field-induced edge-state valleys, with the selected valley reversed for the opposite helicity. Since this excitation occurs away from the valley minima, the photoexcited carriers have finite group velocity, giving rise to a circular photogalvanic response. Van Hove singularities enhance radiative recombination at the band edge, providing a route towards compact, tunable THz emitters.
ER -