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Peer-reviewedCC BY-NC-ND 4.0ACS Omega

Effect of In Mole Fraction on Gamma Ray Shielding Properties of InxAl1–xAs Material

  1. 1Huanghuai University , , ,
  2. 2University of Electronic Science and Technology of China , , ,
  3. 3SR University , , ,

Abstract

The gamma-ray shielding performance of InxAl1–xAs with different In mole fractions was systematically investigated via the Phy-X/PSD. Key shielding parameters including mass attenuation coefficient (MAC), linear attenuation coefficient (LAC), half-value layer (HVL), tenth-value layer (TVL), mean free path (MFP), atomic cross-section (ACS), electronic cross-section (ECS), effective atomic number (Zeff), effective electron density (Neff), effective conductivity (Ceff), R-value, and equivalent atomic number (Zeq) were calculated over the energy range of 0.015–15 MeV. The results demonstrate that the MAC, LAC, ACS, ECS, Zeff, Ceff, and Zeq values increase with a rising In mole fraction, with In0.8Al0.2As exhibiting the highest values among the studied samples, alongside lower HVL, TVL, and MFP values. At equivalent photon energies, a linear correlation was observed between HVL, TVL, and MFP and the In mole fraction as x increased from 0.25 to 0.8. To quantify the composition-driven enhancement, a comprehensive shielding performance index (ICSP) was defined, and In0.8Al0.2As showed up to a 369% improvement at 0.1 MeV relative to In0.25Al0.75As.These findings suggest that increasing In content effectively enhances the gamma-ray attenuation capability of InAlAs materials. Furthermore, the observed linear relationships between shielding parameters and composition enable the prediction and optimization of shielding performance through compositional tuning, providing a theoretical foundation for the compositional design of III–V compound semiconductors in radiation shielding applications.

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BibTeX
@article{sun2026effect,
  title = {{Effect of In Mole Fraction on Gamma Ray Shielding Properties of InxAl1–xAs Material}},
  author = {Shuxiang Sun and Xiaowei Zhang and Xintong Xie and Hongying Mei and Xiaorong Luo and J. Ajayan},
  journal = {ACS Omega},
  year = {2026},
  month = nov,
  doi = {10.1021/acsomega.6c09106},
  url = {https://pubs.acs.org/acsodf/article/doi/10.1021/acsomega.6c09106/5462468/Effect-of-In-Mole-Fraction-on-Gamma-Ray-Shielding},
  note = {CC BY-NC-ND 4.0},
}
RIS
TY  - JOUR
TI  - Effect of In Mole Fraction on Gamma Ray Shielding Properties of InxAl1–xAs Material
AU  - Shuxiang Sun
AU  - Xiaowei Zhang
AU  - Xintong Xie
AU  - Hongying Mei
AU  - Xiaorong Luo
AU  - J. Ajayan
PY  - 2026
DA  - 2026/11/02
JO  - ACS Omega
DO  - 10.1021/acsomega.6c09106
UR  - https://pubs.acs.org/acsodf/article/doi/10.1021/acsomega.6c09106/5462468/Effect-of-In-Mole-Fraction-on-Gamma-Ray-Shielding
AB  - The gamma-ray shielding performance of InxAl1–xAs with different In mole fractions was systematically investigated via the Phy-X/PSD. Key shielding parameters including mass attenuation coefficient (MAC), linear attenuation coefficient (LAC), half-value layer (HVL), tenth-value layer (TVL), mean free path (MFP), atomic cross-section (ACS), electronic cross-section (ECS), effective atomic number (Zeff), effective electron density (Neff), effective conductivity (Ceff), R-value, and equivalent atomic number (Zeq) were calculated over the energy range of 0.015–15 MeV. The results demonstrate that the MAC, LAC, ACS, ECS, Zeff, Ceff, and Zeq values increase with a rising In mole fraction, with In0.8Al0.2As exhibiting the highest values among the studied samples, alongside lower HVL, TVL, and MFP values. At equivalent photon energies, a linear correlation was observed between HVL, TVL, and MFP and the In mole fraction as x increased from 0.25 to 0.8. To quantify the composition-driven enhancement, a comprehensive shielding performance index (ICSP) was defined, and In0.8Al0.2As showed up to a 369% improvement at 0.1 MeV relative to In0.25Al0.75As.These findings suggest that increasing In content effectively enhances the gamma-ray attenuation capability of InAlAs materials. Furthermore, the observed linear relationships between shielding parameters and composition enable the prediction and optimization of shielding performance through compositional tuning, providing a theoretical foundation for the compositional design of III–V compound semiconductors in radiation shielding applications.
SN  - 2470-1343
ER  -