Coexistence of Donor and Acceptor Hydrogen States in n-Type InN
Abstract
Hydrogen often exhibits amphoteric behavior in semiconductors, but its role is in n-type InN remains unresolved. Wurtzite InN is a narrow-gap semiconductor with high electron mobility and is therefore attractive for high-speed electronics and optoelectronic applications. Here we use hard x-ray photoemission spectroscopy (HAXPES) to probe hydrogen-related electronic structure in as-grown and post-annealed InN thin films prepared at different grown temperatures. Post annealing, which reduces the concentration of hydrogen impurities in the films, shifts the core-level spectra toward lower binding energy, consistent with a chemical-potential shift associated with the passivation of electron carriers. In the valence-band spectra, an acceptor-like in-gap feature near the valence-band maximum is suppressed after annealing. Together with the established donor-like behavior of hydrogen in InN, these results suggest that acceptor H- states coexist with donor H+ states in InN. The coexistence of these opposite hydrogen charge states provides a microscopic picture of hydrogen-driven compensation in InN and highlights the amphoteric nature of hydrogen even in a highly n-type semiconductor.
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BibTeX
@misc{kobayashi2026coexistence,
title = {{Coexistence of Donor and Acceptor Hydrogen States in n-Type InN}},
author = {Masaki Kobayashi and Yudai Yamashita and Kazuyuki Hirama and Yoshitaka Taniyasu},
howpublished = {arXiv},
year = {2026},
month = nov,
doi = {10.48550/arxiv.2606.17401},
eprint = {2606.17401},
archivePrefix = {arXiv},
url = {https://arxiv.org/abs/2606.17401},
note = {CC BY 4.0},
}
RIS
TY - UNPB
TI - Coexistence of Donor and Acceptor Hydrogen States in n-Type InN
AU - Masaki Kobayashi
AU - Yudai Yamashita
AU - Kazuyuki Hirama
AU - Yoshitaka Taniyasu
PY - 2026
DA - 2026/11/05
PB - arXiv
DO - 10.48550/arxiv.2606.17401
UR - https://arxiv.org/abs/2606.17401
AB - Hydrogen often exhibits amphoteric behavior in semiconductors, but its role is in n-type InN remains unresolved. Wurtzite InN is a narrow-gap semiconductor with high electron mobility and is therefore attractive for high-speed electronics and optoelectronic applications. Here we use hard x-ray photoemission spectroscopy (HAXPES) to probe hydrogen-related electronic structure in as-grown and post-annealed InN thin films prepared at different grown temperatures. Post annealing, which reduces the concentration of hydrogen impurities in the films, shifts the core-level spectra toward lower binding energy, consistent with a chemical-potential shift associated with the passivation of electron carriers. In the valence-band spectra, an acceptor-like in-gap feature near the valence-band maximum is suppressed after annealing. Together with the established donor-like behavior of hydrogen in InN, these results suggest that acceptor H- states coexist with donor H+ states in InN. The coexistence of these opposite hydrogen charge states provides a microscopic picture of hydrogen-driven compensation in InN and highlights the amphoteric nature of hydrogen even in a highly n-type semiconductor.
ER -