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Peer-reviewedCC BY-NC-NDJACS Au

Ground-State Charge Generation-Enabled Nondestructive Defect Passivation in Organic Photovoltaics.

  • Guangliu Ran1
  • Yan Xie1
  • Bo Zhuang2
  • Jiahe Zhang3
  • Tanjin Lv1
  • Zhishan Bo3
  • Hao Lu4
  • Wenkai Zhang1
4 affiliations
  1. 1School of Physics and Astronomy, Applied Optics Beijing Area Major Laboratory, Center for Advanced Quantum Studies, Beijing Normal University, and Key Laboratory of Multiscale Spin Physics (Beijing Normal University), Ministry of Education, Beijing 100875, China.
  2. 2Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University, Beijing 100871, China.
  3. 3Beijing Key Laboratory of Energy Conversion and Storage Materials College of Chemistry, Beijing Normal University, Beijing 100875, China.
  4. 4College of Materials Science and Engineering, Qingdao University, Qingdao, Shandong 266071, China.
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Abstract

Ground-state charge generation (GSCG) offers a potent yet underexplored avenue for trap engineering in organic solar cells (OSCs), provided it can be harnessed without disrupting the bulk heterojunction morphology. Herein, we demonstrate an efficient GSCG strategy via FeCl3 doping in the polymer donor D18, achieving a paradigm of "nondestructive defect passivation." Mechanistically, the GSCG-induced trap filling operates in the pre-excitation ground state, effectively neutralizing deep-level defects without compromising the donor-acceptor interfacial integrity. Ultrafast spectroscopy reveals that this ground-state premodulation selectively optimizes photophysical dynamics: while preserving efficient exciton dissociation, it profoundly suppresses nongeminate recombination and blocks the energy-loss channel associated with triplet exciton formation. Consequently, the optimized devices deliver a remarkable open-circuit voltage of 0.917 V and a photoelectric conversion efficiency of 20.67%. This work elucidates the mechanism of morphology-compatible defect passivation, establishing GSCG as a critical lever for minimizing energy loss in high-performance OSCs.

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Cite

BibTeXRIS
BibTeX
@article{ran2026groundstate,
  title = {{Ground-State Charge Generation-Enabled Nondestructive Defect Passivation in Organic Photovoltaics.}},
  author = {Guangliu Ran and Yan Xie and Bo Zhuang and Jiahe Zhang and Tanjin Lv and Zhishan Bo and Hao Lu and Wenkai Zhang},
  journal = {JACS Au},
  year = {2026},
  month = sep,
  doi = {10.1021/jacsau.6c01120},
  url = {https://europepmc.org/article/MED/42953164},
  note = {CC BY-NC-ND},
}
RIS
TY  - JOUR
TI  - Ground-State Charge Generation-Enabled Nondestructive Defect Passivation in Organic Photovoltaics.
AU  - Guangliu Ran
AU  - Yan Xie
AU  - Bo Zhuang
AU  - Jiahe Zhang
AU  - Tanjin Lv
AU  - Zhishan Bo
AU  - Hao Lu
AU  - Wenkai Zhang
PY  - 2026
DA  - 2026/09/25
JO  - JACS Au
DO  - 10.1021/jacsau.6c01120
UR  - https://europepmc.org/article/MED/42953164
AB  - Ground-state charge generation (GSCG) offers a potent yet underexplored avenue for trap engineering in organic solar cells (OSCs), provided it can be harnessed without disrupting the bulk heterojunction morphology. Herein, we demonstrate an efficient GSCG strategy via FeCl3 doping in the polymer donor D18, achieving a paradigm of "nondestructive defect passivation." Mechanistically, the GSCG-induced trap filling operates in the pre-excitation ground state, effectively neutralizing deep-level defects without compromising the donor-acceptor interfacial integrity. Ultrafast spectroscopy reveals that this ground-state premodulation selectively optimizes photophysical dynamics: while preserving efficient exciton dissociation, it profoundly suppresses nongeminate recombination and blocks the energy-loss channel associated with triplet exciton formation. Consequently, the optimized devices deliver a remarkable open-circuit voltage of 0.917 V and a photoelectric conversion efficiency of 20.67%. This work elucidates the mechanism of morphology-compatible defect passivation, establishing GSCG as a critical lever for minimizing energy loss in high-performance OSCs.
SN  - 2691-3704
ER  -