Quantum Well Resonant Tunneling Diode Probe of Correlated States in Twisted Bilayer MoS2
Abstract
Moiré superlattices formed in transition metal dichalcogenides (TMDs) offer a versatile platform for exploring emergent quantum phases arising from strong electronic correlations. In this work, we develop a new experimental platform, the quantum well resonant tunneling diode (QWRTD), to probe the electronic landscape of ≈ 56.1∘ twisted bilayer MoS2 (tMoS2). By measuring the differential conductance (dI/dVProbe) as a function of filling factor ν and displacement field D, we observe a robust integer insulating feature at ν= 1 that persists across the measured displacement field range. Furthermore, we identify a displacement-field-induced fractional insulating feature near ν= 3/4 for D < −75~mV/nm. Its temperature dependence is consistent with a generalized Wigner crystal interpretation, although the microscopic order remains to be established. These features are also observed in another device with a similar twist angle (≈ 56.4∘). Our results provide evidence of correlated states in near-AB-stacked tMoS2 and establish QWRTD as a tool for investigating strong correlations in van der Waals heterostructures.
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BibTeX
@misc{zhou2026quantum,
title = {{Quantum Well Resonant Tunneling Diode Probe of Correlated States in Twisted Bilayer MoS$_2$}},
author = {Chengjie Zhou and Jin-Xin Hu and Sihong Xu and Zijing Jin and Hui Li and Kam Tuen Law and Jiannong Wang},
howpublished = {arXiv},
year = {2026},
month = oct,
doi = {10.48550/arxiv.2609.39417},
eprint = {2609.39417},
archivePrefix = {arXiv},
url = {https://arxiv.org/abs/2609.39417},
}
RIS
TY - UNPB
TI - Quantum Well Resonant Tunneling Diode Probe of Correlated States in Twisted Bilayer MoS_2
AU - Chengjie Zhou
AU - Jin-Xin Hu
AU - Sihong Xu
AU - Zijing Jin
AU - Hui Li
AU - Kam Tuen Law
AU - Jiannong Wang
PY - 2026
DA - 2026/10/16
PB - arXiv
DO - 10.48550/arxiv.2609.39417
UR - https://arxiv.org/abs/2609.39417
AB - Moiré superlattices formed in transition metal dichalcogenides (TMDs) offer a versatile platform for exploring emergent quantum phases arising from strong electronic correlations. In this work, we develop a new experimental platform, the quantum well resonant tunneling diode (QWRTD), to probe the electronic landscape of ≈ 56.1^∘ twisted bilayer MoS_2 (tMoS_2). By measuring the differential conductance (dI/dV_Probe) as a function of filling factor ν and displacement field D, we observe a robust integer insulating feature at ν= 1 that persists across the measured displacement field range. Furthermore, we identify a displacement-field-induced fractional insulating feature near ν= 3/4 for D < −75~mV/nm. Its temperature dependence is consistent with a generalized Wigner crystal interpretation, although the microscopic order remains to be established. These features are also observed in another device with a similar twist angle (≈ 56.4^∘). Our results provide evidence of correlated states in near-AB-stacked tMoS_2 and establish QWRTD as a tool for investigating strong correlations in van der Waals heterostructures.
ER -