Orbital angular momentum accumulation in SrVO3 thin films

Abstract

Orbital transport in light transition metals has emerged as a promising route toward angular-momentum electronics, with Hanle magnetoresistance (HMR) providing a direct electrical probe of the orbital Hall effect (OHE) in non-magnetic conductors. Here we report magnetoresistance signatures consistent with orbital HMR in epitaxial SrVO*3 (SVO), a narrow-band d¹ oxide grown on (001)-oriented (LaAlO*3)*0.3(Sr*2TaAlO*6)*0.7 substrates. In films of different thickness and longitudinal resistivity, field-dependent measurements reveal a reproducible positive, even-in-field, and approximately quadratic Δρ*x−y response, as expected for HMR. Angular measurements characterize the corresponding magnetoresistance anisotropy and reveal an additional non-Hanle contribution. Density functional theory (DFT) calculations yield an intrinsic orbital Hall conductivity σ*OH^DFT = 390,(ℏ/e),Ω⁻¹cm⁻¹ and a spin Hall conductivity σ_SH^DFT = −12,(ℏ/e),Ω⁻¹cm⁻¹ at the Fermi level, corresponding to |σ_OH^DFT/σ_SH^DFT| ≈ 33, thus indicating a predominantly orbital response. Using the diffusive HMR framework with λ_OD = 2 nm as a reference value, the 20.8 nm film gives conservative saturation-limit lower-bound (LB) estimates θ_OH,LB = 0.0144 ± 0.0004 and σ_OH,LB = (460 ± 11),(ℏ/e),Ω⁻¹cm⁻¹, comparable to the DFT value. Across the series, lower-bound estimates obtained with the same λ_OD increase overall with longitudinal conductivity. These results suggest that narrow-band d¹ metallic oxides are a promising platform for orbital transport.

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BibTeX RIS

BibTeX

@misc{brehin2026orbital,
  title = {{Orbital angular momentum accumulation in SrVO3 thin films}},
  author = {Julien Brehin and Montserrat Aguilar-Pujol and Dongwook Go and F. Casanova and J. Fontcuberta and E. Longo},
  howpublished = {HAL},
  year = {2026},
  month = sep,
  doi = {10.48550/arxiv.2609.21551},
  eprint = {2609.21551},
  archivePrefix = {arXiv},
  url = {https://hal.science/hal-05796568v1},
  note = {CC BY 4.0},
}

RIS

TY  - UNPB
TI  - Orbital angular momentum accumulation in SrVO3 thin films
AU  - Julien Brehin
AU  - Montserrat Aguilar-Pujol
AU  - Dongwook Go
AU  - F. Casanova
AU  - J. Fontcuberta
AU  - E. Longo
PY  - 2026
DA  - 2026/09/18
PB  - HAL
DO  - 10.48550/arxiv.2609.21551
UR  - https://hal.science/hal-05796568v1
AB  - Orbital transport in light transition metals has emerged as a promising route toward angular-momentum electronics, with Hanle magnetoresistance (HMR) providing a direct electrical probe of the orbital Hall effect (OHE) in non-magnetic conductors. Here we report magnetoresistance signatures consistent with orbital HMR in epitaxial SrVO*3 (SVO), a narrow-band d^1 oxide grown on (001)-oriented (LaAlO*3)*0.3(Sr*2TaAlO*6)*0.7 substrates. In films of different thickness and longitudinal resistivity, field-dependent measurements reveal a reproducible positive, even-in-field, and approximately quadratic Δρ*x−y response, as expected for HMR. Angular measurements characterize the corresponding magnetoresistance anisotropy and reveal an additional non-Hanle contribution. Density functional theory (DFT) calculations yield an intrinsic orbital Hall conductivity σ*OH^DFT = 390,(ℏ/e),Ω^−1cm^−1 and a spin Hall conductivity σ_SH^DFT = −12,(ℏ/e),Ω^−1cm^−1 at the Fermi level, corresponding to |σ_OH^DFT/σ_SH^DFT| ≈ 33, thus indicating a predominantly orbital response. Using the diffusive HMR framework with λ_OD = 2 nm as a reference value, the 20.8 nm film gives conservative saturation-limit lower-bound (LB) estimates θ_OH,LB = 0.0144 ± 0.0004 and σ_OH,LB = (460 ± 11),(ℏ/e),Ω^−1cm^−1, comparable to the DFT value. Across the series, lower-bound estimates obtained with the same λ_OD increase overall with longitudinal conductivity. These results suggest that narrow-band d^1 metallic oxides are a promising platform for orbital transport.
ER  -

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