All-electrical detection of spin-coherent trap state dynamics at the Si/SiO2 interface
4 affiliations
- 11Department of Physics and Astronomy, Coastal Carolina University, Conway, South Carolina 29526, USA2Department of Physics, University of Evansville, Evansville, Indiana 47722, USA
- 23Department of Engineering Science and Mechanics, Pennsylvania State University, University Park, Pennsylvania 16802, USA
- 33Department of Engineering Science and Mechanics, Pennsylvania State University, University Park, Pennsylvania 16802, USA4Graduate Program in Materials Science and Engineering, Pennsylvania State University, University Park, Pennsylvania 16802, USA
- 45Department of Physics and Astronomy, University of Iowa, Iowa City, Iowa 52242, USA6Department of Applied Physics and Science Education, Eindhoven University of Technology, Eindhoven, The Netherlands
Abstract
Dielectric interfaces critical for metal–oxide–semiconductor electronic devices possess spin-coherent trap states that can behave as quantum sensors of small magnetic fields or, through spin noise, contribute to the spin decoherence of electronic quantum bits (qubits). The existence of small numbers of such traps can be electrically detected through spin-dependent recombination current; however, the interpretation of such measurements is only now possible after the publication of a general theory of the phenomena [Harmon et al. Appl. Phys. Lett. 123 251603 (2023)]. This article compares two electrical trap-spin measurement and identification techniques, electrically detected magnetic resonance and the recently observed near-zero field magnetoresistance, with Shockley–Read–Hall trap-assisted recombination current calculations. The bias dependence of these electrical effects provides direct evidence that, for the Si/SiO2 interface, spin mixing of the carriers producing the recombination current occurs via an effective semiclassical hyperfine interaction emanating from the bath of nuclear spins. The results can be generalized to describe the recombination current used as the sensing signal in all-electrical quantum magnetometers, as well as to provide quantitative descriptions of the spin-induced noise relevant for spin qubits near the Si/SiO2 interface.
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BibTeX
@article{harmon2026allelectrical,
title = {{All-electrical detection of spin-coherent trap state dynamics at the Si/SiO2 interface}},
author = {Nicholas J. Harmon and James P. Ashton and Patrick M. Lenahan and Michael E. Flatté},
journal = {APL Materials},
year = {2026},
month = oct,
doi = {10.1063/5.0341503},
url = {https://doi.org/10.1063/5.0341503},
note = {CC BY},
}
RIS
TY - JOUR
TI - All-electrical detection of spin-coherent trap state dynamics at the Si/SiO2 interface
AU - Nicholas J. Harmon
AU - James P. Ashton
AU - Patrick M. Lenahan
AU - Michael E. Flatté
PY - 2026
DA - 2026/10/23
JO - APL Materials
DO - 10.1063/5.0341503
UR - https://doi.org/10.1063/5.0341503
AB - Dielectric interfaces critical for metal–oxide–semiconductor electronic devices possess spin-coherent trap states that can behave as quantum sensors of small magnetic fields or, through spin noise, contribute to the spin decoherence of electronic quantum bits (qubits). The existence of small numbers of such traps can be electrically detected through spin-dependent recombination current; however, the interpretation of such measurements is only now possible after the publication of a general theory of the phenomena [Harmon et al. Appl. Phys. Lett. 123 251603 (2023)]. This article compares two electrical trap-spin measurement and identification techniques, electrically detected magnetic resonance and the recently observed near-zero field magnetoresistance, with Shockley–Read–Hall trap-assisted recombination current calculations. The bias dependence of these electrical effects provides direct evidence that, for the Si/SiO2 interface, spin mixing of the carriers producing the recombination current occurs via an effective semiclassical hyperfine interaction emanating from the bath of nuclear spins. The results can be generalized to describe the recombination current used as the sensing signal in all-electrical quantum magnetometers, as well as to provide quantitative descriptions of the spin-induced noise relevant for spin qubits near the Si/SiO2 interface.
SN - 2166-532X
ER -