InAs Quantum Dots for Infrared Optoelectronics: Interface Engineering, Device Performance, and Emerging Opportunities
- 1Macao Institute of Materials Science and Engineering, Macau University of Science and Technology, Taipa, Macau SAR 999078, China
- 2Institute of Functional Nano & Soft Materials (FUNSOM), Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, State Key Laboratory of Bioinspired Interfacial Materials Science, Soochow University, Suzhou 215123, China
Abstract
Indium arsenide (InAs) quantum dots (QDs) offer a promising Pb- and Hg-free material platform for infrared optoelectronics owing to their narrow bulk bandgap, strong quantum confinement, and size-tunable optical response. However, surface defects, limited electronic coupling in quantum dot (QD) solids, and operational instability can prevent advances in material quality from translating into improved device performance. This review examines InAs QDs through a materials-interface-device-performance framework. We first discuss how synthetic control, core/shell heterostructures, ligand exchange, and surface reconstruction influence interfacial electronic states and carrier dynamics. We then analyze device-specific performance and trade-offs in solar cells, quantum dot light-emitting diodes, infrared photodetectors, and field-effect transistors, focusing on charge injection and extraction, trap-assisted losses, noise, and stability. Finally, we identify emerging opportunities in contact engineering, reliable performance benchmarking, scalable film fabrication, and advanced infrared device architectures. This device-oriented perspective emphasizes the role of coordinated interface engineering in connecting nanocrystal properties with functional optoelectronic performance.
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BibTeX
@article{ding2026inas,
title = {{InAs Quantum Dots for Infrared Optoelectronics: Interface Engineering, Device Performance, and Emerging Opportunities}},
author = {Ling-Yi Ding and Wan-Shan Shen and Feng Zhao and Ya-Kun Wang and Liang-Sheng Liao},
journal = {Nanomaterials},
year = {2026},
month = oct,
doi = {10.3390/nano16211376},
url = {https://www.mdpi.com/2079-4991/16/21/1376},
note = {CC BY 4.0},
}
RIS
TY - JOUR
TI - InAs Quantum Dots for Infrared Optoelectronics: Interface Engineering, Device Performance, and Emerging Opportunities
AU - Ling-Yi Ding
AU - Wan-Shan Shen
AU - Feng Zhao
AU - Ya-Kun Wang
AU - Liang-Sheng Liao
PY - 2026
DA - 2026/10/27
JO - Nanomaterials
DO - 10.3390/nano16211376
UR - https://www.mdpi.com/2079-4991/16/21/1376
AB - Indium arsenide (InAs) quantum dots (QDs) offer a promising Pb- and Hg-free material platform for infrared optoelectronics owing to their narrow bulk bandgap, strong quantum confinement, and size-tunable optical response. However, surface defects, limited electronic coupling in quantum dot (QD) solids, and operational instability can prevent advances in material quality from translating into improved device performance. This review examines InAs QDs through a materials-interface-device-performance framework. We first discuss how synthetic control, core/shell heterostructures, ligand exchange, and surface reconstruction influence interfacial electronic states and carrier dynamics. We then analyze device-specific performance and trade-offs in solar cells, quantum dot light-emitting diodes, infrared photodetectors, and field-effect transistors, focusing on charge injection and extraction, trap-assisted losses, noise, and stability. Finally, we identify emerging opportunities in contact engineering, reliable performance benchmarking, scalable film fabrication, and advanced infrared device architectures. This device-oriented perspective emphasizes the role of coordinated interface engineering in connecting nanocrystal properties with functional optoelectronic performance.
SN - 2079-4991
ER -