Orientation refinement for nanobeam precession electron diffraction patterns using spot intensity profiles
Abstract
We develop a method to measure crystallographic orientations with high angular resolution for nano-beam precession electron diffraction patterns, and applicable to 4D scanning precession electron diffraction. We show that internal variations of intensity in the diffraction spots can be simulated and correlated to experimental variations to measure the crystallographic orientation with a much better angular resolution that with the standard method of automated crystal orientation mapping (ACOM). In a tilt series carried out with long exposure time on a monocrystal of silicon around the main goniometer tilt axis, the imposed tilt angles are retrieved with a 0.044° to 0.054° precision with refinement, against 0.25° to 0.33° with the standard method. Shorter exposure times, introducing Poisson noise, marginally degrade the precision to a 0.054° to 0.066° range. The method also corrects a systematic error of ACOM near zone axis.
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BibTeX
@misc{despres2026orientation,
title = {{Orientation refinement for nanobeam precession electron diffraction patterns using spot intensity profiles}},
author = {Arthur Després and Muriel Vérion and Edgar F. Rauch},
howpublished = {arXiv},
year = {2026},
month = oct,
doi = {10.48550/arxiv.2610.02871},
eprint = {2610.02871},
archivePrefix = {arXiv},
url = {https://arxiv.org/abs/2610.02871},
note = {CC BY 4.0},
}
RIS
TY - UNPB
TI - Orientation refinement for nanobeam precession electron diffraction patterns using spot intensity profiles
AU - Arthur Després
AU - Muriel Vérion
AU - Edgar F. Rauch
PY - 2026
DA - 2026/10/02
PB - arXiv
DO - 10.48550/arxiv.2610.02871
UR - https://arxiv.org/abs/2610.02871
AB - We develop a method to measure crystallographic orientations with high angular resolution for nano-beam precession electron diffraction patterns, and applicable to 4D scanning precession electron diffraction. We show that internal variations of intensity in the diffraction spots can be simulated and correlated to experimental variations to measure the crystallographic orientation with a much better angular resolution that with the standard method of automated crystal orientation mapping (ACOM). In a tilt series carried out with long exposure time on a monocrystal of silicon around the main goniometer tilt axis, the imposed tilt angles are retrieved with a 0.044° to 0.054° precision with refinement, against 0.25° to 0.33° with the standard method. Shorter exposure times, introducing Poisson noise, marginally degrade the precision to a 0.054° to 0.066° range. The method also corrects a systematic error of ACOM near zone axis.
ER -