Interfacial engineering of an amino-functionalized bimetallic NiNd-MOF decorated MoS2 heterostructure for enhanced symmetric supercapacitor performance
- 1Department of Physics and Nanotechnology, College of Engineering and Technology, SRM Institute of Science and Technology Kattankulathur 603-203, Chengalpattu District Tamil Nadu India
Abstract
Rational engineering of heterostructure electrode materials with optimized charge-transport pathways and abundant electroactive sites is highly desired for developing high-performance supercapacitor (SCs). In this work, a hierarchical NiNd-MOF@MoS2 hybrid architecture was successfully synthesised by a facile solvothermal strategy, exploiting the synergistic interfacial interactions between bimetallic NiNd-MOF and layered MoS2 nanosheets. The heterostructure construction not only inhibit the aggregation of nanosheets but also improve the active-site utilization and facilitate the ion/electron transfer efficiency in the electrode framework, which can accelerate the electrochemical reaction kinetics. Comprehensive structural, morphological, and compositional analyses confirmed the incorporation of MoS2 within the NiNd-MOF matrix and the formation of a stable hierarchical architecture. Benefiting from the synergistic integration of NiNd-MOF and MoS2, NiNd-MOF@MoS2 delivered a high specific capacitance (Csp) of 813 F g−1 at 1 A g−1, outperforming the pristine NiNd-MOF. Furthermore, the assembled symmetric two-electrode system exhibited a Csp of 76.5 F g−1 at 1 A g−1 and energy density (Ed) of 21 Wh kg−1 at a power density (Pd) of 696.7 W kg−1 and it also demonstrated 100% coulombic efficiency and excellent cycling stability, retaining 86.9% of its initial capacitance after 10 000 charge–discharge cycles. Furthermore, the practical application of the NiNd-MOF@MoS2 hybrid was demonstrated in an LED with transistor assistance, further supporting its promising application for portable low power electronic device for next-generation energy-storage systems.
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BibTeX
@article{annamalai2026interfacial,
title = {{Interfacial engineering of an amino-functionalized bimetallic NiNd-MOF decorated MoS2 heterostructure for enhanced symmetric supercapacitor performance}},
author = {Oviya Annamalai and Bhavani Sankaran and T. Kalaivani},
journal = {RSC advances},
year = {2026},
month = oct,
doi = {10.1039/d6ra07975j},
url = {https://europepmc.org/article/PMC/PMC13670516},
note = {CC BY},
}
RIS
TY - JOUR
TI - Interfacial engineering of an amino-functionalized bimetallic NiNd-MOF decorated MoS2 heterostructure for enhanced symmetric supercapacitor performance
AU - Oviya Annamalai
AU - Bhavani Sankaran
AU - T. Kalaivani
PY - 2026
DA - 2026/10/15
JO - RSC advances
DO - 10.1039/d6ra07975j
UR - https://europepmc.org/article/PMC/PMC13670516
AB - Rational engineering of heterostructure electrode materials with optimized charge-transport pathways and abundant electroactive sites is highly desired for developing high-performance supercapacitor (SCs). In this work, a hierarchical NiNd-MOF@MoS2 hybrid architecture was successfully synthesised by a facile solvothermal strategy, exploiting the synergistic interfacial interactions between bimetallic NiNd-MOF and layered MoS2 nanosheets. The heterostructure construction not only inhibit the aggregation of nanosheets but also improve the active-site utilization and facilitate the ion/electron transfer efficiency in the electrode framework, which can accelerate the electrochemical reaction kinetics. Comprehensive structural, morphological, and compositional analyses confirmed the incorporation of MoS2 within the NiNd-MOF matrix and the formation of a stable hierarchical architecture. Benefiting from the synergistic integration of NiNd-MOF and MoS2, NiNd-MOF@MoS2 delivered a high specific capacitance (Csp) of 813 F g−1 at 1 A g−1, outperforming the pristine NiNd-MOF. Furthermore, the assembled symmetric two-electrode system exhibited a Csp of 76.5 F g−1 at 1 A g−1 and energy density (Ed) of 21 Wh kg−1 at a power density (Pd) of 696.7 W kg−1 and it also demonstrated 100% coulombic efficiency and excellent cycling stability, retaining 86.9% of its initial capacitance after 10 000 charge–discharge cycles. Furthermore, the practical application of the NiNd-MOF@MoS2 hybrid was demonstrated in an LED with transistor assistance, further supporting its promising application for portable low power electronic device for next-generation energy-storage systems.
SN - 2046-2069
ER -