Design optimization of the inter-electrode structures in DC-RSD

Abstract

DC-coupled Resistive Silicon Detectors (RSD) share charge among electrodes through a resistive n⁺ surface layer, and the choice of inter-electrode structure --- a trench, a resistive strip, or no structure at all --- directly determines the achievable position resolution and its uniformity. This paper addresses the question of which structure best optimises the spatial resolution. To answer it quantitatively, DCRSD_SurfaceSimulator was developed, a ROOT-based tool that models the resistive surface as a two-dimensional Kirchhoff resistive network and solves for charge sharing as a function of hit position, surface resistivity, and inter-electrode structure. The simulator is validated against test-beam data from FBK DC-RSD sensors with 300, 500, and 1000~μm pixel pitch, reproducing the position resolution, its spatial uniformity, and the signal-sharing templates correctly. Using the validated simulator, trenches, resistive strips, and no containment are then compared on position resolution and its spatial uniformity, inter-electrode resistance, and signal leakage to outer pixels. Resistive strips are found to outperform trenches in resolution by approximately 25\% for all tested strip resistances (500--2000~Ω) and input impedances (0--100~Ω), at a surface resistivity of 1000~Ω/□, and trace the origin of this difference to the spatial gradient of the charge-sharing fraction: trenches produce a markedly weaker and less uniform gradient, particularly away from the pixel centre, than either a resistive strip or a bare resistive surface.

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Cite

BibTeX RIS

BibTeX

@misc{cartiglia2026design,
  title = {{Design optimization of the inter-electrode structures in DC-RSD}},
  author = {N. Cartiglia and R. Arcidiacono and G. Bardelli and M. Boscardin and A. Cassese and M. Centis Vignali and T. Croci and M. Durando and M. Ferrero and A. Fondacci and S. Gaiero and O. Hammad Ali and L. Lanteri and A. Losana and L. Menzio and A. Morozzi and F. Moscatelli and D. Passeri and G. Paternoster and G. Sguazzoni and F. Siviero and V. Sola and L. Viliani},
  howpublished = {arXiv},
  year = {2026},
  month = oct,
  doi = {10.48550/arxiv.2610.06676},
  eprint = {2610.06676},
  archivePrefix = {arXiv},
  url = {https://arxiv.org/abs/2610.06676},
}

RIS

TY  - UNPB
TI  - Design optimization of the inter-electrode structures in DC-RSD
AU  - N. Cartiglia
AU  - R. Arcidiacono
AU  - G. Bardelli
AU  - M. Boscardin
AU  - A. Cassese
AU  - M. Centis Vignali
AU  - T. Croci
AU  - M. Durando
AU  - M. Ferrero
AU  - A. Fondacci
AU  - S. Gaiero
AU  - O. Hammad Ali
AU  - L. Lanteri
AU  - A. Losana
AU  - L. Menzio
AU  - A. Morozzi
AU  - F. Moscatelli
AU  - D. Passeri
AU  - G. Paternoster
AU  - G. Sguazzoni
AU  - F. Siviero
AU  - V. Sola
AU  - L. Viliani
PY  - 2026
DA  - 2026/10/07
PB  - arXiv
DO  - 10.48550/arxiv.2610.06676
UR  - https://arxiv.org/abs/2610.06676
AB  - DC-coupled Resistive Silicon Detectors (RSD) share charge among electrodes through a resistive n^+ surface layer, and the choice of inter-electrode structure --- a trench, a resistive strip, or no structure at all --- directly determines the achievable position resolution and its uniformity. This paper addresses the question of which structure best optimises the spatial resolution. To answer it quantitatively, DCRSD_SurfaceSimulator was developed, a ROOT-based tool that models the resistive surface as a two-dimensional Kirchhoff resistive network and solves for charge sharing as a function of hit position, surface resistivity, and inter-electrode structure. The simulator is validated against test-beam data from FBK DC-RSD sensors with 300, 500, and 1000~μm pixel pitch, reproducing the position resolution, its spatial uniformity, and the signal-sharing templates correctly. Using the validated simulator, trenches, resistive strips, and no containment are then compared on position resolution and its spatial uniformity, inter-electrode resistance, and signal leakage to outer pixels. Resistive strips are found to outperform trenches in resolution by approximately 25\% for all tested strip resistances (500--2000~Ω) and input impedances (0--100~Ω), at a surface resistivity of 1000~Ω/□, and trace the origin of this difference to the spatial gradient of the charge-sharing fraction: trenches produce a markedly weaker and less uniform gradient, particularly away from the pixel centre, than either a resistive strip or a bare resistive surface.
ER  -

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