Synthesis of dense SiC compacts by liquid Si infiltration and their dissolution characteristics in molten Si–Cr alloy
Abstract
In the SiC solution growth method, a graphite crucible is generally used to hold the Si-based solution and serve as the C source. However, the excess C supply by crucible dissolution can easily generate SiC microcrystals in solution, resulting in the formation of macro-defects (SiC inclusions) in the grown crystals. To address this issue, liquid Si infiltration (LSI) was used to fabricate dense SiC compacts for the application as a source material in the SiC solution growth. Preforms for LSI process were prepared using SiC powder and various C sources (graphite, carbon black, and carbonized phenol resin), and fabrication of dense SiC compacts with SiC area fractions of ~90 % was achieved. Apparent mass-transfer coefficients and J D factors were obtained from evaluating the dissolution behaviors of LSI-fabricated SiC compacts in a molten Si-Cr alloy under forced convection, and the dissolution characteristics were compared with graphite and sintered SiC. These results suggest that mass transfer at the boundary layer is the rate-limiting step of dissolution in this system. The J D factors of LSI-SiC were the smallest than those of graphite and sintered SiC, suggesting that LSI-SiC is a suitable source material for SiC solution growth.
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BibTeX
@article{kawanishi2026synthesis,
title = {{Synthesis of dense SiC compacts by liquid Si infiltration and their dissolution characteristics in molten Si–Cr alloy}},
author = {Sakiko Kawanishi and Sota Ikarashi and Takeshi Mitani and Takeshi Yoshikawa and Didier Chaussende and Hiroyuki Shibata},
journal = {Ceramics International},
year = {2026},
month = oct,
doi = {10.1016/j.ceramint.2025.05.043},
url = {https://hal.science/hal-05836693v1},
note = {CC BY-NC-ND 4.0},
}
RIS
TY - JOUR
TI - Synthesis of dense SiC compacts by liquid Si infiltration and their dissolution characteristics in molten Si–Cr alloy
AU - Sakiko Kawanishi
AU - Sota Ikarashi
AU - Takeshi Mitani
AU - Takeshi Yoshikawa
AU - Didier Chaussende
AU - Hiroyuki Shibata
PY - 2026
DA - 2026/10/23
JO - Ceramics International
DO - 10.1016/j.ceramint.2025.05.043
UR - https://hal.science/hal-05836693v1
AB - In the SiC solution growth method, a graphite crucible is generally used to hold the Si-based solution and serve as the C source. However, the excess C supply by crucible dissolution can easily generate SiC microcrystals in solution, resulting in the formation of macro-defects (SiC inclusions) in the grown crystals. To address this issue, liquid Si infiltration (LSI) was used to fabricate dense SiC compacts for the application as a source material in the SiC solution growth. Preforms for LSI process were prepared using SiC powder and various C sources (graphite, carbon black, and carbonized phenol resin), and fabrication of dense SiC compacts with SiC area fractions of ~90 % was achieved. Apparent mass-transfer coefficients and J D factors were obtained from evaluating the dissolution behaviors of LSI-fabricated SiC compacts in a molten Si-Cr alloy under forced convection, and the dissolution characteristics were compared with graphite and sintered SiC. These results suggest that mass transfer at the boundary layer is the rate-limiting step of dissolution in this system. The J D factors of LSI-SiC were the smallest than those of graphite and sintered SiC, suggesting that LSI-SiC is a suitable source material for SiC solution growth.
SN - 0272-8842
ER -