Advanced semiconductor materials for future electronic systems: from conventional to quantum devices
9 affiliations
- 1Department of Electrical Engineering Technology, College of Applied Industrial Technology (CAIT), Jazan University, Baysh, Saudi Arabia
- 2Department of ECE, Sri Venkateshwara College of Engineering, Bengaluru, India
- 3Department of Electrical and Electronics Engineering, Academy of Maritime Education and Training (AMET) Deemed University, Chennai, India
- 4Department of Mechanical Engineering, Saveetha School of Engineering, SIMATS, Saveetha University, Chennai, Tamil Nadu, India
- 5Department of Mechanical Engineering, Sharda School of Engineering & Sciences, Sharda University, Greater Noida, India
- 6School of Mechanical Engineering, VIT-AP University, Amaravati, Andhra Pradesh, India
- 7Department of Mechanical Engineering, Amrita School of Engineering, Amrita Vishwa Vidyapeetham, Bengaluru, India
- 8Department of Industrial Engineering, College of Engineering, University of Business and Technology, Jeddah, Saudi Arabia
- 9Faculty of Health and Life Sciences, INTI International University, Persiaran Perdana BBN, Nilai, Negeri Sembilan, Malaysia
Abstract
Modern electronics have advanced through the continuous improvement of semiconductor technology. However, the fundamental limitations of conventional silicon, including scaling constraints, short-channel effects, and quantum phenomena, necessitate advanced semiconductor materials and next-generation device architectures. This review discusses the development of semiconductor materials from conventional elemental and compound semiconductors to wide-band-gap, two-dimensional (2D), organic, and quantum semiconductors for future electronic systems. It covers semiconductor physics, band structure engineering, material characterization, device performance metrics, and recent advances in crystal growth, epitaxial growth, film deposition, nanofabrication, and doping techniques. This review also examines emerging semiconductor devices, including FinFETs, gate-all-around (GAA) transistors, neuromorphic and memristive devices, spintronics, and quantum semiconductor devices. Atomically thin 2D semiconductors offer remarkable electrostatic control for future miniaturization, while wide-band-gap semiconductors provide higher breakdown field strength and stability than silicon. Furthermore, the review evaluates defect engineering, interface reliability, quantum–material quality, heterogeneous integration, and fabrication compatibility, particularly the BEOL thermal budget below 400 °C, which is critical for integrating new semiconductor channels with silicon logic. Consequently, low-temperature deposition processes such as atomic layer deposition (ALD), plasma-enhanced chemical vapor deposition (PECVD), and selective CVD/MOCVD methods provide beneficial routes for heterogeneous integration.
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BibTeX
@article{alqudaihi2026advanced,
title = {{Advanced semiconductor materials for future electronic systems: from conventional to quantum devices}},
author = {Ali Ahmed Alqudaihi and N. Dhasarathan and Amaleswari Rajulapati and Vijayakumar Sivasundar and Akanksha Mishra and Santosh Kumar Sahu and Ravi Kumar V. and Mohammed Aman and Kumar Krishnan},
journal = {Advances in Physics: X},
year = {2026},
month = nov,
doi = {10.1080/23746149.2026.2727992},
url = {https://doi.org/10.1080/23746149.2026.2727992},
note = {CC BY},
}
RIS
TY - JOUR
TI - Advanced semiconductor materials for future electronic systems: from conventional to quantum devices
AU - Ali Ahmed Alqudaihi
AU - N. Dhasarathan
AU - Amaleswari Rajulapati
AU - Vijayakumar Sivasundar
AU - Akanksha Mishra
AU - Santosh Kumar Sahu
AU - Ravi Kumar V.
AU - Mohammed Aman
AU - Kumar Krishnan
PY - 2026
DA - 2026/11/07
JO - Advances in Physics: X
DO - 10.1080/23746149.2026.2727992
UR - https://doi.org/10.1080/23746149.2026.2727992
AB - Modern electronics have advanced through the continuous improvement of semiconductor technology. However, the fundamental limitations of conventional silicon, including scaling constraints, short-channel effects, and quantum phenomena, necessitate advanced semiconductor materials and next-generation device architectures. This review discusses the development of semiconductor materials from conventional elemental and compound semiconductors to wide-band-gap, two-dimensional (2D), organic, and quantum semiconductors for future electronic systems. It covers semiconductor physics, band structure engineering, material characterization, device performance metrics, and recent advances in crystal growth, epitaxial growth, film deposition, nanofabrication, and doping techniques. This review also examines emerging semiconductor devices, including FinFETs, gate-all-around (GAA) transistors, neuromorphic and memristive devices, spintronics, and quantum semiconductor devices. Atomically thin 2D semiconductors offer remarkable electrostatic control for future miniaturization, while wide-band-gap semiconductors provide higher breakdown field strength and stability than silicon. Furthermore, the review evaluates defect engineering, interface reliability, quantum–material quality, heterogeneous integration, and fabrication compatibility, particularly the BEOL thermal budget below 400 °C, which is critical for integrating new semiconductor channels with silicon logic. Consequently, low-temperature deposition processes such as atomic layer deposition (ALD), plasma-enhanced chemical vapor deposition (PECVD), and selective CVD/MOCVD methods provide beneficial routes for heterogeneous integration.
SN - 2374-6149
ER -