Rapid Atmospheric Vapor Deposition of H:In2O3 Transparent Conducting Oxide Thin Films

Abstract

Transparent conducting oxides (TCOs) are essential for the optoelectronics industry, but there is a critical gap in cost-effective methods to rapidly deposit low sheet resistance, high transmittance films without damaging delicate materials, including emerging soft semiconductors like metal-halide perovskites. In this work, atmospheric pressure chemical vapor deposition (AP-CVD) is used to synthesise H:In2O3 films with 7.20+/-0.01 Ohm/sq sheet resistance (0.50+/-0.06 mOhm.cm resistivity) and transmittance up to 89% in the near-infrared (NIR), surpassing commercial sputter-deposited indium tin oxide. The growth rate is 40x higher than atomic layer deposition (ALD), and the AP-CVD films are fully processed under atmospheric conditions at only 140 C. Comparison of secondary ion mass spectrometry and time-of-flight elastic recoil detection analysis with changes in carrier concentration indicate that H dopants are introduced from the water oxidant. There is an increase in mobility form 40+/-10 cm2/Vs to 160+/-30 cm2/Vs when changing from O2 to H2O as the oxidant, which is attributed to H dopants passivating oxygen vacancies that act as carrier scattering centers. This work establishes AP-CVD as a promising method for manufacturing high figure-of-merit TCOs in a rapid, scalable and cost-effective manner, using mild growth conditions compatible with thermally-sensitive materials.

Versions

10.1002/sstr.70625Published version10.1002/sstr.70625

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BibTeX RIS

BibTeX

@misc{guo2026rapid,
  title = {{Rapid Atmospheric Vapor Deposition of H:In2O3 Transparent Conducting Oxide Thin Films}},
  author = {Xiaoyu Guo and Hae-Jun Seok and Eilidh L. Quinn and Matthew K Sharpe and Callum. D. McAleese and Yi-Teng Huang and Xinjuan Li and Kexue Li and Chia-Yu Chang and Yongjie Wang and John O'Sullivan and Katie L. Moore and Caterina Ducati and Ruy Sebastian Bonilla and Han-Ki Kim and Abderrahime Sekkat and Robert L. Z. Hoye},
  howpublished = {arXiv},
  year = {2026},
  month = may,
  doi = {10.48550/arxiv.2605.16166},
  eprint = {2605.16166},
  archivePrefix = {arXiv},
  url = {https://arxiv.org/abs/2605.16166},
  note = {CC BY 4.0},
}

RIS

TY  - UNPB
TI  - Rapid Atmospheric Vapor Deposition of H:In2O3 Transparent Conducting Oxide Thin Films
AU  - Xiaoyu Guo
AU  - Hae-Jun Seok
AU  - Eilidh L. Quinn
AU  - Matthew K Sharpe
AU  - Callum. D. McAleese
AU  - Yi-Teng Huang
AU  - Xinjuan Li
AU  - Kexue Li
AU  - Chia-Yu Chang
AU  - Yongjie Wang
AU  - John O'Sullivan
AU  - Katie L. Moore
AU  - Caterina Ducati
AU  - Ruy Sebastian Bonilla
AU  - Han-Ki Kim
AU  - Abderrahime Sekkat
AU  - Robert L. Z. Hoye
PY  - 2026
DA  - 2026/05/15
PB  - arXiv
DO  - 10.48550/arxiv.2605.16166
UR  - https://arxiv.org/abs/2605.16166
AB  - Transparent conducting oxides (TCOs) are essential for the optoelectronics industry, but there is a critical gap in cost-effective methods to rapidly deposit low sheet resistance, high transmittance films without damaging delicate materials, including emerging soft semiconductors like metal-halide perovskites. In this work, atmospheric pressure chemical vapor deposition (AP-CVD) is used to synthesise H:In2O3 films with 7.20+/-0.01 Ohm/sq sheet resistance (0.50+/-0.06 mOhm.cm resistivity) and transmittance up to 89% in the near-infrared (NIR), surpassing commercial sputter-deposited indium tin oxide. The growth rate is 40x higher than atomic layer deposition (ALD), and the AP-CVD films are fully processed under atmospheric conditions at only 140 C. Comparison of secondary ion mass spectrometry and time-of-flight elastic recoil detection analysis with changes in carrier concentration indicate that H dopants are introduced from the water oxidant. There is an increase in mobility form 40+/-10 cm2/Vs to 160+/-30 cm2/Vs when changing from O2 to H2O as the oxidant, which is attributed to H dopants passivating oxygen vacancies that act as carrier scattering centers. This work establishes AP-CVD as a promising method for manufacturing high figure-of-merit TCOs in a rapid, scalable and cost-effective manner, using mild growth conditions compatible with thermally-sensitive materials.
ER  -

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