PreprintarXiv licencearXiv
Photogalvanic effect in monolayers of transition metal dichalcogenides
Abstract
We present a theoretical study of photocurrents generated by direct optical transitions induced by linearly polarized radiation in monolayers of transition metal dichalcogenides. A microscopic theory of both the ballistic and shift contributions to the photocurrent is developed that accounts for Coulomb attraction between photoexcited electrons and holes. It is demonstrated that, in typical 2D semiconductors, the Coulomb correlation causes the ballistic contribution to dominate over the shift photocurrent.
Related
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BibTeX
@misc{budkin2026photogalvanic,
title = {{Photogalvanic effect in monolayers of transition metal dichalcogenides}},
author = {G. V. Budkin and E. L. Ivchenko},
howpublished = {arXiv},
year = {2026},
month = sep,
doi = {10.48550/arxiv.2609.22001},
eprint = {2609.22001},
archivePrefix = {arXiv},
url = {https://arxiv.org/abs/2609.22001},
}
RIS
TY - UNPB
TI - Photogalvanic effect in monolayers of transition metal dichalcogenides
AU - G. V. Budkin
AU - E. L. Ivchenko
PY - 2026
DA - 2026/09/18
PB - arXiv
DO - 10.48550/arxiv.2609.22001
UR - https://arxiv.org/abs/2609.22001
AB - We present a theoretical study of photocurrents generated by direct optical transitions induced by linearly polarized radiation in monolayers of transition metal dichalcogenides. A microscopic theory of both the ballistic and shift contributions to the photocurrent is developed that accounts for Coulomb attraction between photoexcited electrons and holes. It is demonstrated that, in typical 2D semiconductors, the Coulomb correlation causes the ballistic contribution to dominate over the shift photocurrent.
ER -