Dilute-Limit Defect Displacements Enabled by Brillouin-Zone Sampling
Abstract
Defects and their interaction with the semiconductor host lattice play an essential role in a variety of technologies. When a defect transitions between two electronic states, the lattice distorts in response. Large displacements occur near the defect, inducing displacements on neighboring atoms, and so on, producing small displacements on atoms hundreds of Ångströms from the defect. Describing these displacements accurately is challenging for first-principles calculations due to limited supercell sizes. Here we demonstrate a procedure to efficiently obtain dilute-limit atomic displacements, using information obtained in typical modest supercells. In our approach, the atomic displacements are first obtained in a small supercell and converted into a force difference under a harmonic potential energy surface. The force difference and phonon modes at different bf q-points are then unfolded into the Born-von Kármán supercell to obtain the dilute-limit atomic displacements. We critically analyze the convergence behavior of the force difference and study possible electron density differences that give rise to those forces, arguing that modest supercells are sufficient for internal transitions and bound-exciton transitions. Two example applications of our approach are given: (1) we calculate the luminescence spectrum of the NV center in diamond and the T center in Si and (2) we obtain dilute-limit configuration coordinate diagrams for these defects. In particular, we find that coupling to acoustic phonon modes reduces the accepting-mode frequency in the configuration coordinate diagram. Our work provides the missing ingredients necessary to address truly dilute-limit transitions at defects.
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BibTeX
@misc{turiansky2026dilutelimit,
title = {{Dilute-Limit Defect Displacements Enabled by Brillouin-Zone Sampling}},
author = {Mark E. Turiansky and John L. Lyons and Noam Bernstein},
howpublished = {arXiv},
year = {2026},
month = aug,
doi = {10.48550/arxiv.2608.27722},
eprint = {2608.27722},
archivePrefix = {arXiv},
url = {https://arxiv.org/abs/2608.27722},
note = {CC BY 4.0},
}
RIS
TY - UNPB
TI - Dilute-Limit Defect Displacements Enabled by Brillouin-Zone Sampling
AU - Mark E. Turiansky
AU - John L. Lyons
AU - Noam Bernstein
PY - 2026
DA - 2026/08/27
PB - arXiv
DO - 10.48550/arxiv.2608.27722
UR - https://arxiv.org/abs/2608.27722
AB - Defects and their interaction with the semiconductor host lattice play an essential role in a variety of technologies. When a defect transitions between two electronic states, the lattice distorts in response. Large displacements occur near the defect, inducing displacements on neighboring atoms, and so on, producing small displacements on atoms hundreds of Ångströms from the defect. Describing these displacements accurately is challenging for first-principles calculations due to limited supercell sizes. Here we demonstrate a procedure to efficiently obtain dilute-limit atomic displacements, using information obtained in typical modest supercells. In our approach, the atomic displacements are first obtained in a small supercell and converted into a force difference under a harmonic potential energy surface. The force difference and phonon modes at different bf q-points are then unfolded into the Born-von Kármán supercell to obtain the dilute-limit atomic displacements. We critically analyze the convergence behavior of the force difference and study possible electron density differences that give rise to those forces, arguing that modest supercells are sufficient for internal transitions and bound-exciton transitions. Two example applications of our approach are given: (1) we calculate the luminescence spectrum of the NV center in diamond and the T center in Si and (2) we obtain dilute-limit configuration coordinate diagrams for these defects. In particular, we find that coupling to acoustic phonon modes reduces the accepting-mode frequency in the configuration coordinate diagram. Our work provides the missing ingredients necessary to address truly dilute-limit transitions at defects.
ER -