Investigating relative population partitioning in the presence of B-C defects in diamond
Abstract
Leveraging our earlier formalism for charge-state decay [see R. Kuate Defo et al., 108 235208 (2023)], we investigate relative population partitioning in the presence of singly negatively charged substitutional boron impurities (B-C) in diamond samples, where these diamond samples also contain substitutional nitrogen (NC ) impurities and have ether-terminated surfaces. Effectively, given any two defects, one donor and one acceptor, such that their charge-transition levels, their relative populations, and the temperature are known, the timescale for charge transfer between the two defects is completely determined. We use this insight and experimental measurements for the timescale for charge transfer between NV- centers and NC hybridized with the ether-terminated surface of diamond, as well as the temperature and the relative populations for the NV- centers, [see Z. Yuan et al., Phys. Rev. Res. 2, 033263 (2020)] to argue that an additional defect must be modulating the relative populations of NC hybridized with the ether-terminated surface of diamond. The shifts in the local Fermi level for NC hybridized with the ether-terminated surface of diamond are consistent with the additional defect being a substitutional boron impurity (BC). Ultimately, our results allow for the determination of local relative concentrations of ionized defects.
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BibTeX
@misc{defo2026investigating,
title = {{Investigating relative population partitioning in the presence of B$^-_\textC$ defects in diamond}},
author = {Rodrick Kuate Defo and Steven L. Richardson},
howpublished = {arXiv},
year = {2026},
month = oct,
doi = {10.48550/arxiv.2610.26332},
eprint = {2610.26332},
archivePrefix = {arXiv},
url = {https://arxiv.org/abs/2610.26332},
}
RIS
TY - UNPB
TI - Investigating relative population partitioning in the presence of B^-_C defects in diamond
AU - Rodrick Kuate Defo
AU - Steven L. Richardson
PY - 2026
DA - 2026/10/19
PB - arXiv
DO - 10.48550/arxiv.2610.26332
UR - https://arxiv.org/abs/2610.26332
AB - Leveraging our earlier formalism for charge-state decay [see R. Kuate Defo et al., 108 235208 (2023)], we investigate relative population partitioning in the presence of singly negatively charged substitutional boron impurities (B^-_C) in diamond samples, where these diamond samples also contain substitutional nitrogen (N_C ) impurities and have ether-terminated surfaces. Effectively, given any two defects, one donor and one acceptor, such that their charge-transition levels, their relative populations, and the temperature are known, the timescale for charge transfer between the two defects is completely determined. We use this insight and experimental measurements for the timescale for charge transfer between NV^- centers and N_C hybridized with the ether-terminated surface of diamond, as well as the temperature and the relative populations for the NV^- centers, [see Z. Yuan et al., Phys. Rev. Res. 2, 033263 (2020)] to argue that an additional defect must be modulating the relative populations of N_C hybridized with the ether-terminated surface of diamond. The shifts in the local Fermi level for N_C hybridized with the ether-terminated surface of diamond are consistent with the additional defect being a substitutional boron impurity (B_C). Ultimately, our results allow for the determination of local relative concentrations of ionized defects.
ER -