Fully spin-polarised quantum Hall effect at sub-tesla magnetic fields
- 1Physics Department, The University of Warwick, Coventry, UK
- 2National Research Council of Canada, Ottawa, ON Canada
Abstract
Abstarct: The integer quantum Hall effect provides one of the most precise and robust manifestations of topological quantum transport. Yet, in semiconductor systems, its development to a fully spin-polarised state typically requires magnetic fields of several tesla and milli-Kelvin temperatures to overcome disorder, Landau-level broadening, and thermal smearing. Here we report a fully spin-polarised ν = 1 quantum Hall state in a two-dimensional (2D) hole gas hosted in a compressively strained germanium quantum well grown on silicon, stabilised at magnetic fields as low as 0.25 − 0.3 T and temperatures up to 1.5 K. This unusually low-field quantisation is enabled by an ultra-dilute carrier regime combined with extremely large Zeeman energy that approaches the cyclotron energy of free carriers over a wide density range, resulting in dominant spin splitting of Landau levels at sub-tesla fields to reach ν= 1 fully spin-polarized quantum limit. Magnetotransport and 2D Landau-fan measurements demonstrate that Landau-level broadening remains smaller than the spin splitting throughout the whole magnetic field range down to 0.25 mT, allowing robust quantisation of the Hall resistance at h/e2. These results establish access to an experimentally unexplored regime of spin-polarised quantum Hall physics in a semiconductor platform and open new opportunities for exploring exchange-driven and correlated many-body states of dilute systems in small magnetic fields.
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BibTeX
@article{myronov2026fully,
title = {{Fully spin-polarised quantum Hall effect at sub-tesla magnetic fields}},
author = {M. Myronov and W. Jiang and S. Studenikin},
journal = {Communications Materials},
year = {2026},
month = jul,
doi = {10.1038/s43246-026-01244-4},
url = {https://doi.org/10.1038/s43246-026-01244-4},
note = {CC BY 4.0},
}
RIS
TY - JOUR
TI - Fully spin-polarised quantum Hall effect at sub-tesla magnetic fields
AU - M. Myronov
AU - W. Jiang
AU - S. Studenikin
PY - 2026
DA - 2026/07/03
JO - Communications Materials
DO - 10.1038/s43246-026-01244-4
UR - https://doi.org/10.1038/s43246-026-01244-4
AB - Abstarct: The integer quantum Hall effect provides one of the most precise and robust manifestations of topological quantum transport. Yet, in semiconductor systems, its development to a fully spin-polarised state typically requires magnetic fields of several tesla and milli-Kelvin temperatures to overcome disorder, Landau-level broadening, and thermal smearing. Here we report a fully spin-polarised ν = 1 quantum Hall state in a two-dimensional (2D) hole gas hosted in a compressively strained germanium quantum well grown on silicon, stabilised at magnetic fields as low as 0.25 − 0.3 T and temperatures up to 1.5 K. This unusually low-field quantisation is enabled by an ultra-dilute carrier regime combined with extremely large Zeeman energy that approaches the cyclotron energy of free carriers over a wide density range, resulting in dominant spin splitting of Landau levels at sub-tesla fields to reach ν= 1 fully spin-polarized quantum limit. Magnetotransport and 2D Landau-fan measurements demonstrate that Landau-level broadening remains smaller than the spin splitting throughout the whole magnetic field range down to 0.25 mT, allowing robust quantisation of the Hall resistance at h/e2. These results establish access to an experimentally unexplored regime of spin-polarised quantum Hall physics in a semiconductor platform and open new opportunities for exploring exchange-driven and correlated many-body states of dilute systems in small magnetic fields.
SN - 2662-4443
ER -