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PreprintCC BY 4.0arXiv

Enhancing Quasi-Two-Dimensional Electronic Structure in Bi2O2Se via Chlorine Substitution

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Abstract

Bismuth oxyselenide (Bi2O2Se) has emerged as a leading semiconductor candidate for next-generation electronics and quantum phenomena research. However, its strong ionic interlayer bonding of Se layers fundamentally restricts the full potential of this otherwise promising quasi-two-dimensional (2D) material. In this work, we demonstrate chlorine substitution as an effective strategy to introduce van der Waals gaps and modify the electronic structure of the system. Through comprehensive transport and angle-resolved photoemission spectroscopy (ARPES) measurements on Bi6O6Se2Cl2 single crystal, an optimal Cl-doping compound, we show that the key electronic features, including indirect band gap, high electron mobility, and carrier effective mass, are well preserved, while the 2D character of the system is sufficiently enhanced. First-principles calculations attribute this selective tunability to the unique spatial separation between conductive Bi-O layers and dopant Se/Cl layers, which enables independent optimization of interlayer coupling and intralayer transport. Remarkably, our theoretical calculations combined with experimental observations project a broad bandgap engineering across a wide range (0.8 ~ 3.5 eV) within the Bi2O2Se system. Our findings not only expand the application potential of Bi2O2Se-based materials in optoelectronics, nanoelectronics, and fundamental research but also highlight spatial decoupling as a viable strategy for modifying detailed electronic structure of quasi-2D quantum systems.

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BibTeX
@misc{jiang2026enhancing,
  title = {{Enhancing Quasi-Two-Dimensional Electronic Structure in Bi2O2Se via Chlorine Substitution}},
  author = {Yong-Zhen Jiang and Qi-Xun Wen and Xiang Xu and Su-Tao Sun and Feng-Fan Ren and Zi-Xuan Zhou and Xing-Yuan You and Yu-Cheng Kan and Zheng Zhang and Jie-Yi Liu and Yu-Zhou Zhao and Zheng-Tai Liu and Mao Ye and Shu-Hua Yao and Jian Zhou and Yan-Bin Chen and Zhong-Kai Liu and Yu-Lin Chen and Yang-Yang Lv and Cheng Chen},
  howpublished = {arXiv},
  year = {2026},
  month = oct,
  doi = {10.48550/arxiv.2610.14619},
  eprint = {2610.14619},
  archivePrefix = {arXiv},
  url = {https://arxiv.org/abs/2610.14619},
  note = {CC BY 4.0},
}
RIS
TY  - UNPB
TI  - Enhancing Quasi-Two-Dimensional Electronic Structure in Bi2O2Se via Chlorine Substitution
AU  - Yong-Zhen Jiang
AU  - Qi-Xun Wen
AU  - Xiang Xu
AU  - Su-Tao Sun
AU  - Feng-Fan Ren
AU  - Zi-Xuan Zhou
AU  - Xing-Yuan You
AU  - Yu-Cheng Kan
AU  - Zheng Zhang
AU  - Jie-Yi Liu
AU  - Yu-Zhou Zhao
AU  - Zheng-Tai Liu
AU  - Mao Ye
AU  - Shu-Hua Yao
AU  - Jian Zhou
AU  - Yan-Bin Chen
AU  - Zhong-Kai Liu
AU  - Yu-Lin Chen
AU  - Yang-Yang Lv
AU  - Cheng Chen
PY  - 2026
DA  - 2026/10/10
PB  - arXiv
DO  - 10.48550/arxiv.2610.14619
UR  - https://arxiv.org/abs/2610.14619
AB  - Bismuth oxyselenide (Bi2O2Se) has emerged as a leading semiconductor candidate for next-generation electronics and quantum phenomena research. However, its strong ionic interlayer bonding of Se layers fundamentally restricts the full potential of this otherwise promising quasi-two-dimensional (2D) material. In this work, we demonstrate chlorine substitution as an effective strategy to introduce van der Waals gaps and modify the electronic structure of the system. Through comprehensive transport and angle-resolved photoemission spectroscopy (ARPES) measurements on Bi6O6Se2Cl2 single crystal, an optimal Cl-doping compound, we show that the key electronic features, including indirect band gap, high electron mobility, and carrier effective mass, are well preserved, while the 2D character of the system is sufficiently enhanced. First-principles calculations attribute this selective tunability to the unique spatial separation between conductive Bi-O layers and dopant Se/Cl layers, which enables independent optimization of interlayer coupling and intralayer transport. Remarkably, our theoretical calculations combined with experimental observations project a broad bandgap engineering across a wide range (0.8 ~ 3.5 eV) within the Bi2O2Se system. Our findings not only expand the application potential of Bi2O2Se-based materials in optoelectronics, nanoelectronics, and fundamental research but also highlight spatial decoupling as a viable strategy for modifying detailed electronic structure of quasi-2D quantum systems.
ER  -