Investigation of Electron-Induced Secondary Electron Emission Behavior of Silicon Compounds
- 1School of Electronics and Internet of Things Engineering, Chongqing Industry Polytechnic University, Chongqing 401120, China
- 2School of Artificial Intelligence and Big Data, Chongqing Industry Polytechnic University, Chongqing 401120, China
- 3School of Cybersecurity, University of Electronic Science and Technology of China, Chengdu 611731, China
Abstract
Secondary electron emission (SEE) in silicon compounds has a significant impact on the performance and reliability of silicon-based vacuum devices. This work investigates the electron-induced SEE behavior of three typical silicon compounds: SiC, Si3N4, and SiO2. The SEE coefficient (SEEC) maximum values are 1.77 for SiC, 2.38 for Si3N4, and 3.41 for SiO2, with SiO2 having the strongest emission capability. A theoretical model covering incident electron energy loss, internal secondary electron excitation, migration, and surface escape was established. The calculated results are consistent with experimental data in the 200–1500 eV range, and the results of the error analysis show that, within the applicable energy range, the deviation between the theoretical calculations and the experimental results is less than 6% on average.
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BibTeX
@article{gu2026investigation,
title = {{Investigation of Electron-Induced Secondary Electron Emission Behavior of Silicon Compounds}},
author = {Yuqing Gu and Wei Fu and Juannan Li and Hong Ran and Kang Zhang and Shiyu Gong},
journal = {Inorganics},
year = {2026},
month = oct,
doi = {10.3390/inorganics14100267},
url = {https://www.mdpi.com/2304-6740/14/10/267},
note = {CC BY 4.0},
}
RIS
TY - JOUR
TI - Investigation of Electron-Induced Secondary Electron Emission Behavior of Silicon Compounds
AU - Yuqing Gu
AU - Wei Fu
AU - Juannan Li
AU - Hong Ran
AU - Kang Zhang
AU - Shiyu Gong
PY - 2026
DA - 2026/10/21
JO - Inorganics
DO - 10.3390/inorganics14100267
UR - https://www.mdpi.com/2304-6740/14/10/267
AB - Secondary electron emission (SEE) in silicon compounds has a significant impact on the performance and reliability of silicon-based vacuum devices. This work investigates the electron-induced SEE behavior of three typical silicon compounds: SiC, Si3N4, and SiO2. The SEE coefficient (SEEC) maximum values are 1.77 for SiC, 2.38 for Si3N4, and 3.41 for SiO2, with SiO2 having the strongest emission capability. A theoretical model covering incident electron energy loss, internal secondary electron excitation, migration, and surface escape was established. The calculated results are consistent with experimental data in the 200–1500 eV range, and the results of the error analysis show that, within the applicable energy range, the deviation between the theoretical calculations and the experimental results is less than 6% on average.
SN - 2304-6740
ER -