Growth and morphology of core-shell nanowires incorporating dissimilar hexagonal semiconductors: the case of InAs-ZnTe
Abstract
Core-shell nanowires incorporating semiconductors from two groups, III-V for the core and II-VI for the shell, have been grown by molecular beam epitaxy in two dedicated chambers connected under ultra-high vacuum, and studied by electron microscopy. During the growth of the shell, the wurtzite structure of the core is replicated in the shell, without any creation of defects. This is true for a wide range of shell thickness, from about one monolayer, up to 25 nm thanks to the good lattice match between the InAs material of the core and the ZnTe material of the shell. While (1 100) m-facets and (11 20) a-facets coexist on the sidewalls of the core, during the growth of the ZnTe shell the size of the m-facets progressively increases at the expense of the a-facets which eventually disappear. A fast growth of the ZnTe shell is observed for the first few monolayers, with a high sticking; this is followed by a slower growth, of the same order of magnitude as observed on a ZnTe core, with a dependence on the nanowire radius which points to the occurrence of mononuclear nucleation
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BibTeX
@misc{mosiiets2026growth,
title = {{Growth and morphology of core-shell nanowires incorporating dissimilar hexagonal semiconductors: the case of InAs-ZnTe}},
author = {Danylo Mosiiets and Susheng Tan and Sergey Frolov and Moïra Hocevar and Joel Cibert and Edith Bellet-Amalric},
howpublished = {HAL},
year = {2026},
month = sep,
doi = {10.48550/arxiv.2610.39770},
eprint = {2610.39770},
archivePrefix = {arXiv},
url = {https://hal.science/hal-05766828v2},
note = {CC BY 4.0},
}
RIS
TY - UNPB
TI - Growth and morphology of core-shell nanowires incorporating dissimilar hexagonal semiconductors: the case of InAs-ZnTe
AU - Danylo Mosiiets
AU - Susheng Tan
AU - Sergey Frolov
AU - Moïra Hocevar
AU - Joel Cibert
AU - Edith Bellet-Amalric
PY - 2026
DA - 2026/09/28
PB - HAL
DO - 10.48550/arxiv.2610.39770
UR - https://hal.science/hal-05766828v2
AB - Core-shell nanowires incorporating semiconductors from two groups, III-V for the core and II-VI for the shell, have been grown by molecular beam epitaxy in two dedicated chambers connected under ultra-high vacuum, and studied by electron microscopy. During the growth of the shell, the wurtzite structure of the core is replicated in the shell, without any creation of defects. This is true for a wide range of shell thickness, from about one monolayer, up to 25 nm thanks to the good lattice match between the InAs material of the core and the ZnTe material of the shell. While (1 100) m-facets and (11 20) a-facets coexist on the sidewalls of the core, during the growth of the ZnTe shell the size of the m-facets progressively increases at the expense of the a-facets which eventually disappear. A fast growth of the ZnTe shell is observed for the first few monolayers, with a high sticking; this is followed by a slower growth, of the same order of magnitude as observed on a ZnTe core, with a dependence on the nanowire radius which points to the occurrence of mononuclear nucleation
ER -