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Peer-reviewedCC BY-NC-ND 4.0ACS Omega

Quasi-Ballistic Thermal Transport in Vertically Aligned h-BN

  • Ping-Che Lee1
  • Mingeun Choi2
  • Diego Contreras Mora1
  • Amy Ross1
  • SeongUk Yun1
  • Dipayan Pal1
  • Dohyun Go1
  • Jit Dutta1
  • Xinyu Wang1
  • Mark Clark3
  • Larry Chen3
  • Ravindra Kanjolia3
4 more authors
  • Mansour Moinpour3
  • Haripin Chandra3
  • Satish Kumar2
  • Andrew C. Kummel1
  1. 1University of California, San Diego , , , ,
  2. 2Georgia Institute of Technology , , , ,
  3. 3EMD Electronics , 3011 N First Street , , ,
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Abstract

Hexagonal boron nitride (h-BN) has attracted significant interest in the semiconductor industry due to its wide bandgap (5.95 eV), high anisotropic thermal conductivity, and low dielectric constant. However, the formation of crystalline h-BN conventionally requires high processing temperatures, which are incompatible with back-end-of-line (BEOL) integration and advanced packaging processes that must remain below 400 °C to avoid degradation of front-end devices. In this work, trichloroborazine (TCB) was systematically investigated using ammonia as the nitrogen co-reactant under both plasma-enhanced atomic layer deposition (PEALD) and atomic layer annealing (ALA) conditions. In the ALA process, low-energy inert ions are shown to enable in situ crystallization at temperatures well below those required for conventional MOCVD. As a result, highly ordered, vertically aligned polycrystalline h-BN films were deposited within a BEOL-compatible temperature window of 300–400 °C. The as-deposited ALA h-BN films exhibited clear signatures of cross-plane quasi-ballistic phonon transport over a thickness range of 20–50 nm, characterized by a thickness-independent effective thermal resistance of ∼6–9 m2 K GW–1. This invariance with film thickness indicates that phonon mean free paths exceed the film thickness, confirming quasi-ballistic heat transport enabled by the high crystallinity and preferential vertical alignment of the h-BN domains.

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Cite

BibTeXRIS
BibTeX
@article{lee2026quasiballistic,
  title = {{Quasi-Ballistic Thermal Transport in Vertically Aligned h-BN}},
  author = {Ping-Che Lee and Mingeun Choi and Diego Contreras Mora and Amy Ross and SeongUk Yun and Dipayan Pal and Dohyun Go and Jit Dutta and Xinyu Wang and Mark Clark and Larry Chen and Ravindra Kanjolia and Mansour Moinpour and Haripin Chandra and Satish Kumar and Andrew C. Kummel},
  journal = {ACS Omega},
  year = {2026},
  month = oct,
  doi = {10.1021/acsomega.6c05339},
  url = {https://pubs.acs.org/acsodf/article/11/42/64801/5452187/Quasi-Ballistic-Thermal-Transport-in-Vertically},
  note = {CC BY-NC-ND 4.0},
}
RIS
TY  - JOUR
TI  - Quasi-Ballistic Thermal Transport in Vertically Aligned h-BN
AU  - Ping-Che Lee
AU  - Mingeun Choi
AU  - Diego Contreras Mora
AU  - Amy Ross
AU  - SeongUk Yun
AU  - Dipayan Pal
AU  - Dohyun Go
AU  - Jit Dutta
AU  - Xinyu Wang
AU  - Mark Clark
AU  - Larry Chen
AU  - Ravindra Kanjolia
AU  - Mansour Moinpour
AU  - Haripin Chandra
AU  - Satish Kumar
AU  - Andrew C. Kummel
PY  - 2026
DA  - 2026/10/15
JO  - ACS Omega
DO  - 10.1021/acsomega.6c05339
UR  - https://pubs.acs.org/acsodf/article/11/42/64801/5452187/Quasi-Ballistic-Thermal-Transport-in-Vertically
AB  - Hexagonal boron nitride (h-BN) has attracted significant interest in the semiconductor industry due to its wide bandgap (5.95 eV), high anisotropic thermal conductivity, and low dielectric constant. However, the formation of crystalline h-BN conventionally requires high processing temperatures, which are incompatible with back-end-of-line (BEOL) integration and advanced packaging processes that must remain below 400 °C to avoid degradation of front-end devices. In this work, trichloroborazine (TCB) was systematically investigated using ammonia as the nitrogen co-reactant under both plasma-enhanced atomic layer deposition (PEALD) and atomic layer annealing (ALA) conditions. In the ALA process, low-energy inert ions are shown to enable in situ crystallization at temperatures well below those required for conventional MOCVD. As a result, highly ordered, vertically aligned polycrystalline h-BN films were deposited within a BEOL-compatible temperature window of 300–400 °C. The as-deposited ALA h-BN films exhibited clear signatures of cross-plane quasi-ballistic phonon transport over a thickness range of 20–50 nm, characterized by a thickness-independent effective thermal resistance of ∼6–9 m2 K GW–1. This invariance with film thickness indicates that phonon mean free paths exceed the film thickness, confirming quasi-ballistic heat transport enabled by the high crystallinity and preferential vertical alignment of the h-BN domains.
SN  - 2470-1343
ER  -