Three-dimensional visualization of threading dislocation in GaN by polarized-light microscopy
Abstract
We demonstrate high-throughput three-dimensional imaging of threading dislocations in ammonothermal GaN wafers using polarized-light microscopy with collimated LED illumination. Threading dislocations exhibited focal-depth-dependent in-plane shifts, enabling visualization of their three-dimensional inclination behavior over large areas. Synchrotron radiation X-ray topography indicated that dislocations with identical in-plane Burgers vector components tended to exhibit similar trace geometries and inclination directions. The threading dislocations were found to be tilted by approximately 3.3° from the c-axis in directions perpendicular to their Burgers vectors, indicating climb-mediated motion associated with strain relaxation during crystal growth. These results demonstrate a simple nondestructive approach for large-area three-dimensional characterization of dislocations in GaN wafers.
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BibTeX
@misc{ishikawa2026threedimensional,
title = {{Three-dimensional visualization of threading dislocation in GaN by polarized-light microscopy}},
author = {Yukari Ishikawa and Kisara Matsumoto and Kazuki Ohnishi and Yongzhao Yao},
howpublished = {arXiv},
year = {2026},
month = oct,
doi = {10.48550/arxiv.2606.27744},
eprint = {2606.27744},
archivePrefix = {arXiv},
url = {https://arxiv.org/abs/2606.27744},
note = {CC BY-NC-SA 4.0},
}
RIS
TY - UNPB
TI - Three-dimensional visualization of threading dislocation in GaN by polarized-light microscopy
AU - Yukari Ishikawa
AU - Kisara Matsumoto
AU - Kazuki Ohnishi
AU - Yongzhao Yao
PY - 2026
DA - 2026/10/21
PB - arXiv
DO - 10.48550/arxiv.2606.27744
UR - https://arxiv.org/abs/2606.27744
AB - We demonstrate high-throughput three-dimensional imaging of threading dislocations in ammonothermal GaN wafers using polarized-light microscopy with collimated LED illumination. Threading dislocations exhibited focal-depth-dependent in-plane shifts, enabling visualization of their three-dimensional inclination behavior over large areas. Synchrotron radiation X-ray topography indicated that dislocations with identical in-plane Burgers vector components tended to exhibit similar trace geometries and inclination directions. The threading dislocations were found to be tilted by approximately 3.3° from the c-axis in directions perpendicular to their Burgers vectors, indicating climb-mediated motion associated with strain relaxation during crystal growth. These results demonstrate a simple nondestructive approach for large-area three-dimensional characterization of dislocations in GaN wafers.
ER -