Highly uniform first-electron position in qubit arrays fabricated on dedicated QSOI(R) 300mm commercial platform
Abstract
We report progress toward the development of a quantum silicon-on-insulator (QSOI(R)) technology compatible with 300mm CMOS fabrication and adapted from the 28nm Fully-Depleted SOI (28nm FD-SOI) platform for scalable quantum computing. We compare quantum devices fabricated with standard 28nm FD-SOI and QSOI(R) technologies, and show striking improvements of room temperature electrostatic properties of the individual device. Moreover, the QSOI(R) technology has significantly reduced the device variability and the dispersion of device properties at the wafer level. Transistor metrics are reproduced by TCAD simulations showing that the electrostatics of the devices behave as expected for QSOI(R) technology. Wafer-scale measurements at sub-2K show reproducible quantum dots down to the few-electron regime with 69\% yield for successful charge detection of the first electron and a dispersion of the first electron position of ± 35 mV over 377 quantum dots. These results establish QSOI(R) as a promising platform for CMOS-compatible quantum device co-integration.
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BibTeX
@misc{pellouxprayer2026highly,
title = {{Highly uniform first-electron position in qubit arrays fabricated on dedicated QSOI(R) 300mm commercial platform}},
author = {Johan Pelloux-Prayer and Elise Prin and Giselle A. Elbaz and Pierre-Louis Julliard and Amaryllis Comiti and Clément Nguyen and Sylvain Martin and Patrick Torresani and Renan Lethiecq and Carlos Augusto Suarez Segovia and Franck Arnaud and Etienne Nowak and Tristan Meunier and Bruna Cardoso Paz},
howpublished = {arXiv},
year = {2026},
month = sep,
doi = {10.48550/arxiv.2609.20043},
eprint = {2609.20043},
archivePrefix = {arXiv},
url = {https://arxiv.org/abs/2609.20043},
}
RIS
TY - UNPB
TI - Highly uniform first-electron position in qubit arrays fabricated on dedicated QSOI(R) 300mm commercial platform
AU - Johan Pelloux-Prayer
AU - Elise Prin
AU - Giselle A. Elbaz
AU - Pierre-Louis Julliard
AU - Amaryllis Comiti
AU - Clément Nguyen
AU - Sylvain Martin
AU - Patrick Torresani
AU - Renan Lethiecq
AU - Carlos Augusto Suarez Segovia
AU - Franck Arnaud
AU - Etienne Nowak
AU - Tristan Meunier
AU - Bruna Cardoso Paz
PY - 2026
DA - 2026/09/17
PB - arXiv
DO - 10.48550/arxiv.2609.20043
UR - https://arxiv.org/abs/2609.20043
AB - We report progress toward the development of a quantum silicon-on-insulator (QSOI(R)) technology compatible with 300mm CMOS fabrication and adapted from the 28nm Fully-Depleted SOI (28nm FD-SOI) platform for scalable quantum computing. We compare quantum devices fabricated with standard 28nm FD-SOI and QSOI(R) technologies, and show striking improvements of room temperature electrostatic properties of the individual device. Moreover, the QSOI(R) technology has significantly reduced the device variability and the dispersion of device properties at the wafer level. Transistor metrics are reproduced by TCAD simulations showing that the electrostatics of the devices behave as expected for QSOI(R) technology. Wafer-scale measurements at sub-2K show reproducible quantum dots down to the few-electron regime with 69\% yield for successful charge detection of the first electron and a dispersion of the first electron position of ± 35 mV over 377 quantum dots. These results establish QSOI(R) as a promising platform for CMOS-compatible quantum device co-integration.
ER -