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Peer-reviewedCC BY 4.0Nano Letters

Atomic-Scale Mapping of an Emergent Interfacial Two-Dimensional Electron Gas at Anatase/LaAlO3

  • Michael Oberaigner1,2
  • Manuel Ederer3
  • Sandeep K. Chaluvadi4
  • Pasquale Orgiani5,4
  • Regina Ciancio4
  • Stefan Löffler3
  • Gerald Kothleitner1,2
  • Daniel Knez1
5 affiliations
  1. 1Institute of Electron Microscopy and Nanoanalysis, Graz University of Technology, Steyrergasse 17, Graz 8010, Austria
  2. 2Graz Centre for Electron Microscopy, Steyrergasse 17, Graz 8010, Austria
  3. 3University Service Centre for Transmission Electron Microscopy, TU Wien, Stadionallee 2, Wien 1020, Vienna, Austria
  4. 4Area Science Park, Padriciano 99, Trieste 34149, Friuli-Venezia Giulia, Italy
  5. 5CNR-IOM Istituto Officina dei Materiali, TASC Laboratory, Area Science Park, Strada statale 14 km 163.5, Trieste 34149, Friuli-Venezia Giulia, Italy
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Abstract

Atomic-level insight into structure, charge distribution, chemistry, and electronic states is essential for understanding emergent properties at oxide interfaces. Here, we leverage the quasi-strain-free anatase TiO2/LaAlO3 interface as an ideal model system to decouple intrinsic polar discontinuities from complex strain artifacts. By combining atomic-resolution electron energy loss spectroscopy with integrated differential phase contrast, we spatially map the electronic states associated with the formation of a two-dimensional electron gas (2DEG). This correlative approach enables the direct real-space disentanglement of intrinsic 2DEG-related states from extrinsic Ti3+ defect states. Supported by density functional theory and inelastic scattering simulations, we reveal a physical superposition: the intrinsic polar electronic reconstruction anchors metallic states directly at the boundary, while oxygen vacancies accumulate further into the film, acting as a donor reservoir. This work not only resolves long-standing ambiguities regarding oxide interfacial conductivity but also provides a robust, transferable framework for related material systems.

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Cite

BibTeXRIS
BibTeX
@article{oberaigner2026atomicscale,
  title = {{Atomic-Scale Mapping of an Emergent Interfacial Two-Dimensional Electron Gas at Anatase/LaAlO3}},
  author = {Michael Oberaigner and Manuel Ederer and Sandeep K. Chaluvadi and Pasquale Orgiani and Regina Ciancio and Stefan Löffler and Gerald Kothleitner and Daniel Knez},
  journal = {Nano Letters},
  year = {2026},
  month = oct,
  doi = {10.1021/acs.nanolett.6c01308},
  url = {https://doi.org/10.1021/acs.nanolett.6c01308},
  note = {CC BY 4.0},
}
RIS
TY  - JOUR
TI  - Atomic-Scale Mapping of an Emergent Interfacial Two-Dimensional Electron Gas at Anatase/LaAlO3
AU  - Michael Oberaigner
AU  - Manuel Ederer
AU  - Sandeep K. Chaluvadi
AU  - Pasquale Orgiani
AU  - Regina Ciancio
AU  - Stefan Löffler
AU  - Gerald Kothleitner
AU  - Daniel Knez
PY  - 2026
DA  - 2026/10/14
JO  - Nano Letters
DO  - 10.1021/acs.nanolett.6c01308
UR  - https://doi.org/10.1021/acs.nanolett.6c01308
AB  - Atomic-level insight into structure, charge distribution, chemistry, and electronic states is essential for understanding emergent properties at oxide interfaces. Here, we leverage the quasi-strain-free anatase TiO2/LaAlO3 interface as an ideal model system to decouple intrinsic polar discontinuities from complex strain artifacts. By combining atomic-resolution electron energy loss spectroscopy with integrated differential phase contrast, we spatially map the electronic states associated with the formation of a two-dimensional electron gas (2DEG). This correlative approach enables the direct real-space disentanglement of intrinsic 2DEG-related states from extrinsic Ti3+ defect states. Supported by density functional theory and inelastic scattering simulations, we reveal a physical superposition: the intrinsic polar electronic reconstruction anchors metallic states directly at the boundary, while oxygen vacancies accumulate further into the film, acting as a donor reservoir. This work not only resolves long-standing ambiguities regarding oxide interfacial conductivity but also provides a robust, transferable framework for related material systems.
SN  - 1530-6984
SN  - 1530-6992
ER  -