Shear SAW piezoelectricity of single-crystalline LiNbO3 films grown on 42∘ YX-LiTaO3 substrates by DLI-CVD
Abstract
Direct growth of single-crystalline LiNbO3 films with technologically relevant nonpolar orientations and a single ferroelectric domain state remains challenging. Here, we demonstrate the epitaxial growth of a 320-nm-thick, single-domain 42° YX-oriented LiNbO3 film on a congruent 42° YX-cut LiTaO3 substrate by direct liquid injection chemical vapor deposition. The deposition temperature was limited to 600°C to preserve the ferroelectric domain state of the LiTaO3 substrate. X-ray diffraction confirmed that the LiNbO3 film inherited the substrate orientation and domain state and exhibited no detectable secondary phases. The LN rocking-curve full width at half maximum was 0.011°, approaching the instrumental resolution and demonstrating its high crystalline quality. Single-port leaky surface acoustic wave (LSAW) resonators with a wavelength of 4 μm were fabricated on the LiNbO3/LiTaO3 heterostructure and on a bare LiTaO3 reference substrate. At approximately 1 GHz, the LiNbO3/LiTaO3-based resonators exhibited an electromechanical coupling coefficient of about 13%, compared to 8.5% for the reference LiTaO3-based resonators. These results demonstrate that direct epitaxial growth can produce high-quality, strongly piezoelectric LiNbO3 films and provide a route toward thickness-controlled layered substrates for high-performance acoustic devices.
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BibTeX
@misc{mirushchenko2026shear,
title = {{Shear SAW piezoelectricity of single-crystalline $\mathrmLiNbO_3$ films grown on $42^\circ$ YX-$\mathrmLiTaO_3$ substrates by DLI-CVD}},
author = {Mikhail Mirushchenko and Roland Salut and Ludovic Gauthier-Manuel and Vincent Astié and Samuel Margueron and Jean-Manuel Decams and Yuancheng Ji and Farshad F. Bolamiri and Ventsislav Yantchev and Ausrine Bartasyte},
howpublished = {arXiv},
year = {2026},
month = oct,
doi = {10.48550/arxiv.2610.24639},
eprint = {2610.24639},
archivePrefix = {arXiv},
url = {https://arxiv.org/abs/2610.24639},
note = {CC BY-NC-ND 4.0},
}
RIS
TY - UNPB
TI - Shear SAW piezoelectricity of single-crystalline LiNbO_3 films grown on 42^∘ YX-LiTaO_3 substrates by DLI-CVD
AU - Mikhail Mirushchenko
AU - Roland Salut
AU - Ludovic Gauthier-Manuel
AU - Vincent Astié
AU - Samuel Margueron
AU - Jean-Manuel Decams
AU - Yuancheng Ji
AU - Farshad F. Bolamiri
AU - Ventsislav Yantchev
AU - Ausrine Bartasyte
PY - 2026
DA - 2026/10/17
PB - arXiv
DO - 10.48550/arxiv.2610.24639
UR - https://arxiv.org/abs/2610.24639
AB - Direct growth of single-crystalline LiNbO_3 films with technologically relevant nonpolar orientations and a single ferroelectric domain state remains challenging. Here, we demonstrate the epitaxial growth of a 320-nm-thick, single-domain 42° YX-oriented LiNbO_3 film on a congruent 42° YX-cut LiTaO_3 substrate by direct liquid injection chemical vapor deposition. The deposition temperature was limited to 600°C to preserve the ferroelectric domain state of the LiTaO_3 substrate. X-ray diffraction confirmed that the LiNbO_3 film inherited the substrate orientation and domain state and exhibited no detectable secondary phases. The LN rocking-curve full width at half maximum was 0.011°, approaching the instrumental resolution and demonstrating its high crystalline quality. Single-port leaky surface acoustic wave (LSAW) resonators with a wavelength of 4 μm were fabricated on the LiNbO_3/LiTaO_3 heterostructure and on a bare LiTaO_3 reference substrate. At approximately 1 GHz, the LiNbO_3/LiTaO_3-based resonators exhibited an electromechanical coupling coefficient of about 13%, compared to 8.5% for the reference LiTaO_3-based resonators. These results demonstrate that direct epitaxial growth can produce high-quality, strongly piezoelectric LiNbO_3 films and provide a route toward thickness-controlled layered substrates for high-performance acoustic devices.
ER -