Multiwavelength Photoluminescence as a Non-destructive Probe of Depth-Dependent UV Damage in Perovskite Semiconductors
Abstract
Buried interfaces play a critical role in the operational stability of perovskite optoelectronic devices, yet remain challenging to probe non-destructively. Here, we demonstrate a multiwavelength photoluminescence-based approach exploiting the wavelength-dependent absorption of perovskites, enabling fast, and non-destructive probing of depth-sensitive degradation behavior of perovskite devices under operational conditions. Using ultraviolet (UV) light-soaking with different indium tin oxide (ITO) modifiers as a test case, we employ wide-field photoluminescence (PL) imaging, time-resolved photoluminescence (trPL) and ideality factor measurements with different wavelength excitation to characterize degradation behavior of both perovskite thin films and photovoltaic devices under UV soaking. Using only nondestructive characterization, we show that UV-induced degradation in p-i-n perovskite solar cells occurs preferentially at the HTL interface, adversely affecting device stability, consistent with ex-situ destructive tests. Our results also show that modifying the buried interface with 3-mercaptopropyltrimethoxysilane reduces UV-induced damage at the buried interface, thus improving the UV stability of both perovskite films and devices. This work establishes a fast, non-destructive strategy to screen depth-dependent degradation in perovskite devices, offering insights for interface design and stability optimization.
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BibTeX
@misc{huang2026multiwavelength,
title = {{Multiwavelength Photoluminescence as a Non-destructive Probe of Depth-Dependent UV Damage in Perovskite Semiconductors}},
author = {Zixu Huang and Julisa Juarez and Akash Dasgupta and David S. Ginger},
howpublished = {arXiv},
year = {2026},
month = oct,
doi = {10.48550/arxiv.2610.36305},
eprint = {2610.36305},
archivePrefix = {arXiv},
url = {https://arxiv.org/abs/2610.36305},
note = {CC BY 4.0},
}
RIS
TY - UNPB
TI - Multiwavelength Photoluminescence as a Non-destructive Probe of Depth-Dependent UV Damage in Perovskite Semiconductors
AU - Zixu Huang
AU - Julisa Juarez
AU - Akash Dasgupta
AU - David S. Ginger
PY - 2026
DA - 2026/10/26
PB - arXiv
DO - 10.48550/arxiv.2610.36305
UR - https://arxiv.org/abs/2610.36305
AB - Buried interfaces play a critical role in the operational stability of perovskite optoelectronic devices, yet remain challenging to probe non-destructively. Here, we demonstrate a multiwavelength photoluminescence-based approach exploiting the wavelength-dependent absorption of perovskites, enabling fast, and non-destructive probing of depth-sensitive degradation behavior of perovskite devices under operational conditions. Using ultraviolet (UV) light-soaking with different indium tin oxide (ITO) modifiers as a test case, we employ wide-field photoluminescence (PL) imaging, time-resolved photoluminescence (trPL) and ideality factor measurements with different wavelength excitation to characterize degradation behavior of both perovskite thin films and photovoltaic devices under UV soaking. Using only nondestructive characterization, we show that UV-induced degradation in p-i-n perovskite solar cells occurs preferentially at the HTL interface, adversely affecting device stability, consistent with ex-situ destructive tests. Our results also show that modifying the buried interface with 3-mercaptopropyltrimethoxysilane reduces UV-induced damage at the buried interface, thus improving the UV stability of both perovskite films and devices. This work establishes a fast, non-destructive strategy to screen depth-dependent degradation in perovskite devices, offering insights for interface design and stability optimization.
ER -