A Low-Temperature Tool for Acousto-electric Detection

Abstract

We have developed an apparatus for the measurement of the acousto-electric effect (AEE) from room temperature to liquid nitrogen temperatures. The AEE is excited by bulk acoustic waves (BAWs) for which a lithium niobate piezoelectric actuator is employed. A very low background noise level is realized through careful electrical and mechanical design of the setup. The validity of the setup is tested by measuring the AEE in heavily doped P-type and N-type silicon. The opposite sign of the AEE signal was seen for both samples, showing dependence of the signal on the type of charge carrier being dragged by acoustic waves. The signal showed quadratic dependence on the driving voltage, which is consistent with the AEE literature. Further, a temperature dependence of the AEE signal was measured, which exhibits a monotonic increase with a rise in temperature. The ability to probe the AEE in bulk samples at low temperatures makes this setup a promising tool to investigate the AEE and related phenomena in different materials at cryogenic temperatures.

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Cite

BibTeX RIS

BibTeX

@misc{mandlik2026lowtemperature,
  title = {{A Low-Temperature Tool for Acousto-electric Detection}},
  author = {Rohit Mandlik and Sunil Nair},
  howpublished = {arXiv},
  year = {2026},
  month = oct,
  doi = {10.48550/arxiv.2610.16262},
  eprint = {2610.16262},
  archivePrefix = {arXiv},
  url = {https://arxiv.org/abs/2610.16262},
}

RIS

TY  - UNPB
TI  - A Low-Temperature Tool for Acousto-electric Detection
AU  - Rohit Mandlik
AU  - Sunil Nair
PY  - 2026
DA  - 2026/10/12
PB  - arXiv
DO  - 10.48550/arxiv.2610.16262
UR  - https://arxiv.org/abs/2610.16262
AB  - We have developed an apparatus for the measurement of the acousto-electric effect (AEE) from room temperature to liquid nitrogen temperatures. The AEE is excited by bulk acoustic waves (BAWs) for which a lithium niobate piezoelectric actuator is employed. A very low background noise level is realized through careful electrical and mechanical design of the setup. The validity of the setup is tested by measuring the AEE in heavily doped P-type and N-type silicon. The opposite sign of the AEE signal was seen for both samples, showing dependence of the signal on the type of charge carrier being dragged by acoustic waves. The signal showed quadratic dependence on the driving voltage, which is consistent with the AEE literature. Further, a temperature dependence of the AEE signal was measured, which exhibits a monotonic increase with a rise in temperature. The ability to probe the AEE in bulk samples at low temperatures makes this setup a promising tool to investigate the AEE and related phenomena in different materials at cryogenic temperatures.
ER  -

Abstract

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