Growth-induced trade-off between polarity, electrical isolation, and structural quality in AlN grown on Si(111) by plasma-assisted molecular beam epitaxy
Abstract
We investigate the effects of substrate temperature and Al flux, at a fixed N flux, on the polarity, electrical properties, and structural quality of AlN films grown on high-resistivity Si(111) by plasma-assisted molecular beam epitaxy. N-rich conditions result in relatively highly resistive Al-polar AlN/Si, whereas Al-rich conditions promote N-polarity and improved structural quality but simultaneously lead to increased p-type conductivity of AlN/Si stacks, consistent with unintentional Al doping of the Si substrate during AlN growth. Increasing the substrate temperature further improves the structural quality while enhancing the unwanted conductivity, revealing a growth-induced trade-off among polarity, electrical isolation, and structural quality. By reducing the substrate temperature to 575°C while maintaining slightly Al-rich conditions, an N-polar AlN/Si stack with a sheet resistance of 276 kΩ/sq is achieved. These results provide guidelines for optimizing AlN/Si templates for various nitride device heterostructures.
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BibTeX
@misc{yazdani2026growthinduced,
title = {{Growth-induced trade-off between polarity, electrical isolation, and structural quality in AlN grown on Si(111) by plasma-assisted molecular beam epitaxy}},
author = {Hossein Yazdani and Nhu Tran and Xin Du and Vit Hornik and Roman Gröger and YongJin Cho},
howpublished = {arXiv},
year = {2026},
month = oct,
doi = {10.48550/arxiv.2610.20523},
eprint = {2610.20523},
archivePrefix = {arXiv},
url = {https://arxiv.org/abs/2610.20523},
}
RIS
TY - UNPB
TI - Growth-induced trade-off between polarity, electrical isolation, and structural quality in AlN grown on Si(111) by plasma-assisted molecular beam epitaxy
AU - Hossein Yazdani
AU - Nhu Tran
AU - Xin Du
AU - Vit Hornik
AU - Roman Gröger
AU - YongJin Cho
PY - 2026
DA - 2026/10/14
PB - arXiv
DO - 10.48550/arxiv.2610.20523
UR - https://arxiv.org/abs/2610.20523
AB - We investigate the effects of substrate temperature and Al flux, at a fixed N flux, on the polarity, electrical properties, and structural quality of AlN films grown on high-resistivity Si(111) by plasma-assisted molecular beam epitaxy. N-rich conditions result in relatively highly resistive Al-polar AlN/Si, whereas Al-rich conditions promote N-polarity and improved structural quality but simultaneously lead to increased p-type conductivity of AlN/Si stacks, consistent with unintentional Al doping of the Si substrate during AlN growth. Increasing the substrate temperature further improves the structural quality while enhancing the unwanted conductivity, revealing a growth-induced trade-off among polarity, electrical isolation, and structural quality. By reducing the substrate temperature to 575°C while maintaining slightly Al-rich conditions, an N-polar AlN/Si stack with a sheet resistance of 276 kΩ/sq is achieved. These results provide guidelines for optimizing AlN/Si templates for various nitride device heterostructures.
ER -