Thermally Tunable Fading Memory Enabled by Opto-Ionic-Electronic Coupling in AgInP2S6-Gated Two-Dimensional Field-Effect Transistors.
6 affiliations
- 1Engineering Science and Mechanics, Penn State University, University Park, Pennsylvania16802, United States.
- 2Department of Inorganic Chemistry, University of Chemistry and Technology Prague, Prague16000, Czech Republic.
- 32DCC, Penn State University, University Park, Pennsylvania16802, United States.
- 4Materials Science and Engineering, Penn State University, University Park, Pennsylvania16802, United States.
- 5Department of Physics, Harcourt Butler Technical University, Kanpur, Uttar Pradesh208002, India.
- 6Electrical Engineering, Penn State University, University Park, Pennsylvania16802, United States.
Abstract
In conventional field-effect transistors (FETs), the gate dielectric primarily provides electrostatic control of the channel and is engineered to remain chemically and electronically inert to ensure stable operation. Emerging studies, however, suggest that functional dielectrics integrated with two-dimensional (2D) semiconductors can introduce additional physical mechanisms that influence device behavior. Here, we investigate AgInP2S6 (AIPS), a high-κ van der Waals thiophosphate, as a functional top-gate dielectric in MoS2 field-effect transistors. The AIPS/MoS2 heterointerface exhibits coupled opto-ionic-electronic interactions, where defect-mediated sub-bandgap photoactivity and photon-assisted Ag+ ion migration independently occur within the dielectric yet collectively modulate the channel conductance. Optical excitation redistributes charge within the dielectric, gradually reconfiguring the ionic landscape and altering the interfacial electrostatic potential. The resulting conductance exhibits strong temperature dependence. At low temperatures (∼0 °C), reduced phonon activity suppresses Ag+ mobility, leading to persistent photoconductivity. At elevated temperatures (∼80 °C), thermally activated ion hopping accelerates relaxation of the stored state. This temperature-dependent retention behavior enables a thermally tunable fading memory response, where the persistence of the optically induced conductance state can be controlled through ionic dynamics. These results highlight how opto-ionic coupling at 2D/dielectric interfaces can introduce stimulus-responsive functionality in transistor architectures, providing a platform for devices that combine sensing and memory behavior within the gate stack.
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BibTeX
@article{sen2026thermally,
title = {{Thermally Tunable Fading Memory Enabled by Opto-Ionic-Electronic Coupling in AgInP2S6-Gated Two-Dimensional Field-Effect Transistors.}},
author = {Dipanjan Sen and Anirban Chowdhury and Anshul Rasyotra and Lei Ding and Rui Gusmao and Subir Ghosh and Arpan Ghosh and Joan M Redwing and Divya Somvanshi and Yang Yang and Zdenek Sofer and Saptarshi Das},
journal = {ACS nano},
year = {2026},
month = oct,
doi = {10.1021/acsnano.5c21149},
url = {https://europepmc.org/article/MED/42899755},
note = {CC BY},
}
RIS
TY - JOUR
TI - Thermally Tunable Fading Memory Enabled by Opto-Ionic-Electronic Coupling in AgInP2S6-Gated Two-Dimensional Field-Effect Transistors.
AU - Dipanjan Sen
AU - Anirban Chowdhury
AU - Anshul Rasyotra
AU - Lei Ding
AU - Rui Gusmao
AU - Subir Ghosh
AU - Arpan Ghosh
AU - Joan M Redwing
AU - Divya Somvanshi
AU - Yang Yang
AU - Zdenek Sofer
AU - Saptarshi Das
PY - 2026
DA - 2026/10/01
JO - ACS nano
DO - 10.1021/acsnano.5c21149
UR - https://europepmc.org/article/MED/42899755
AB - In conventional field-effect transistors (FETs), the gate dielectric primarily provides electrostatic control of the channel and is engineered to remain chemically and electronically inert to ensure stable operation. Emerging studies, however, suggest that functional dielectrics integrated with two-dimensional (2D) semiconductors can introduce additional physical mechanisms that influence device behavior. Here, we investigate AgInP2S6 (AIPS), a high-κ van der Waals thiophosphate, as a functional top-gate dielectric in MoS2 field-effect transistors. The AIPS/MoS2 heterointerface exhibits coupled opto-ionic-electronic interactions, where defect-mediated sub-bandgap photoactivity and photon-assisted Ag+ ion migration independently occur within the dielectric yet collectively modulate the channel conductance. Optical excitation redistributes charge within the dielectric, gradually reconfiguring the ionic landscape and altering the interfacial electrostatic potential. The resulting conductance exhibits strong temperature dependence. At low temperatures (∼0 °C), reduced phonon activity suppresses Ag+ mobility, leading to persistent photoconductivity. At elevated temperatures (∼80 °C), thermally activated ion hopping accelerates relaxation of the stored state. This temperature-dependent retention behavior enables a thermally tunable fading memory response, where the persistence of the optically induced conductance state can be controlled through ionic dynamics. These results highlight how opto-ionic coupling at 2D/dielectric interfaces can introduce stimulus-responsive functionality in transistor architectures, providing a platform for devices that combine sensing and memory behavior within the gate stack.
SN - 1936-0851
SN - 1936-086X
ER -