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PreprintCC BY 4.0arXiv

Pomeranchuk-like electronic localization above 100 K in twisted MoS2

  • Zhiren Xiong
  • Jianqi Huang
  • Ruyue Han
  • Hanwen Wang
  • Hui Ding
  • Jianming Lu
  • Jianpeng Liu
  • Zheng Vitto Han
  • Xingdan Sun
  • Siwen Zhao
  • Baojuan Dong
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Abstract

Twisted transition-metal dichalcogenides (TMDs) have manifested a rich variety of emerging physical phenomena, yet experimental studies have so far been largely limited in their valence bands (p-doped). Here, we show correlated electronic states in the conduction bands (n-doped) of near-AA-twisted bilayer MoS2 with twist angles ranging from ∼2.3∘ to ∼3.5∘, down to the mK temperature regime. A strongly reconstructed correlated phase diagram as a function of twist-angle has been observed - correlated gaps persist to temperatures approaching $160$ K at small twist angles, but collapse to only ∼20 K at intermediate angles, where a richer landscape of interaction-driven states emerges. At the largest twist-angle ∼ 3.5 ∘, correlated resistance at 1 electron per moiré unit cell is enhanced upon heating, consistent with thermally assisted localization, or, a Pomeranchuk-like behaviour. Its magnetic-field response, however, is highly anisotropic, which differs markedly from that of canonical isospin moiré Pomeranchuk effect in graphene systems. Strikingly, such signature can persist even above 100 K around a filling of 2 electrons per moiré, despite of its weak resistive nature. Our results establish the twisted MoS2 as a platform for studying the complexity of charge localization, internal flavour degrees of freedom, and band topology in conduction bands of semiconducting moiré systems.

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Cite

BibTeXRIS
BibTeX
@misc{xiong2026pomeranchuklike,
  title = {{Pomeranchuk-like electronic localization above 100 K in twisted MoS$_2$}},
  author = {Zhiren Xiong and Jianqi Huang and Ruyue Han and Hanwen Wang and Hui Ding and Jianming Lu and Jianpeng Liu and Zheng Vitto Han and Xingdan Sun and Siwen Zhao and Baojuan Dong},
  howpublished = {arXiv},
  year = {2026},
  month = sep,
  doi = {10.48550/arxiv.2609.30128},
  eprint = {2609.30128},
  archivePrefix = {arXiv},
  url = {https://arxiv.org/abs/2609.30128},
  note = {CC BY 4.0},
}
RIS
TY  - UNPB
TI  - Pomeranchuk-like electronic localization above 100 K in twisted MoS_2
AU  - Zhiren Xiong
AU  - Jianqi Huang
AU  - Ruyue Han
AU  - Hanwen Wang
AU  - Hui Ding
AU  - Jianming Lu
AU  - Jianpeng Liu
AU  - Zheng Vitto Han
AU  - Xingdan Sun
AU  - Siwen Zhao
AU  - Baojuan Dong
PY  - 2026
DA  - 2026/09/25
PB  - arXiv
DO  - 10.48550/arxiv.2609.30128
UR  - https://arxiv.org/abs/2609.30128
AB  - Twisted transition-metal dichalcogenides (TMDs) have manifested a rich variety of emerging physical phenomena, yet experimental studies have so far been largely limited in their valence bands (p-doped). Here, we show correlated electronic states in the conduction bands (n-doped) of near-AA-twisted bilayer MoS_2 with twist angles ranging from ∼2.3^∘ to ∼3.5^∘, down to the mK temperature regime. A strongly reconstructed correlated phase diagram as a function of twist-angle has been observed - correlated gaps persist to temperatures approaching $160$ K at small twist angles, but collapse to only ∼20 K at intermediate angles, where a richer landscape of interaction-driven states emerges. At the largest twist-angle ∼ 3.5 ^∘, correlated resistance at 1 electron per moiré unit cell is enhanced upon heating, consistent with thermally assisted localization, or, a Pomeranchuk-like behaviour. Its magnetic-field response, however, is highly anisotropic, which differs markedly from that of canonical isospin moiré Pomeranchuk effect in graphene systems. Strikingly, such signature can persist even above 100 K around a filling of 2 electrons per moiré, despite of its weak resistive nature. Our results establish the twisted MoS_2 as a platform for studying the complexity of charge localization, internal flavour degrees of freedom, and band topology in conduction bands of semiconducting moiré systems.
ER  -