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Peer-reviewedCC BYNano letters

Narrow-Line-Width Electroluminescence in Monolayer WSe2 Enabled by a Sub-5 nm Au/Pt Nanogap.

  • Shurong Miao1,2,3
  • I K M Reaz Rahman1,3
  • Aditya Nirmale2
  • Inha Kim1,3
  • Dorottya Urmossy1,3
  • Thomas P Darlington4
  • Harishankar Jayakumar4
  • Seiichiro Izawa2
  • Archana Raja4,5
  • Daryl C Chrzan3,6
  • Yutaka Majima2
  • Ali Javey1,3,5
6 affiliations
  1. 1Electrical Engineering and Computer Sciences, University of California, Berkeley, Berkeley, California94720, United States.
  2. 2Materials and Structures Laboratory, Institute of Science Tokyo, Yokohama2268503, Japan.
  3. 3Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California94720, United States.
  4. 4The Molecular Foundry, Lawrence Berkeley National Laboratory, Berkeley, California94720, United States.
  5. 5Kavli Energy NanoScience Institute at the University of California, Berkeley, Berkeley, California94720, United States.
  6. 6Department of Materials Science and Engineering, University of California, Berkeley, Berkeley, California94720, United States.
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Abstract

Spectrally isolated, electrically driven emission from localized states in two-dimensional semiconductors remains challenging in scalable planar devices. Here, we report narrow-line-width alternating-current electroluminescence (ACEL) from localized states in monolayer WSe2 using a lithographically defined sub-5 nm Au/Pt nanogap on SiO2/Si at 3.5 K. The curved nanogap geometry produces a nonuniform strain landscape and regions of enhanced electric field that may influence the local electronic environment. Under square-wave gate excitation, the device exhibits a spectrally isolated ACEL line at 1.652 eV with an apparent fitted line width of approximately 2 meV, in contrast to broad, multipeak photoluminescence from the same device. Spectral decomposition identifies dominant ZPL-like and weaker red-shifted sideband-like contributions. This nanogap architecture provides a scalable planar platform for narrow-line-width, electrically driven localized emission in two-dimensional materials.

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Cite

BibTeXRIS
BibTeX
@article{miao2026narrowlinewidth,
  title = {{Narrow-Line-Width Electroluminescence in Monolayer WSe2 Enabled by a Sub-5 nm Au/Pt Nanogap.}},
  author = {Shurong Miao and I K M Reaz Rahman and Aditya Nirmale and Inha Kim and Dorottya Urmossy and Thomas P Darlington and Harishankar Jayakumar and Seiichiro Izawa and Archana Raja and Daryl C Chrzan and Yutaka Majima and Ali Javey},
  journal = {Nano letters},
  year = {2026},
  month = oct,
  doi = {10.1021/acs.nanolett.6c03133},
  url = {https://europepmc.org/article/MED/42917054},
  note = {CC BY},
}
RIS
TY  - JOUR
TI  - Narrow-Line-Width Electroluminescence in Monolayer WSe2 Enabled by a Sub-5 nm Au/Pt Nanogap.
AU  - Shurong Miao
AU  - I K M Reaz Rahman
AU  - Aditya Nirmale
AU  - Inha Kim
AU  - Dorottya Urmossy
AU  - Thomas P Darlington
AU  - Harishankar Jayakumar
AU  - Seiichiro Izawa
AU  - Archana Raja
AU  - Daryl C Chrzan
AU  - Yutaka Majima
AU  - Ali Javey
PY  - 2026
DA  - 2026/10/01
JO  - Nano letters
DO  - 10.1021/acs.nanolett.6c03133
UR  - https://europepmc.org/article/MED/42917054
AB  - Spectrally isolated, electrically driven emission from localized states in two-dimensional semiconductors remains challenging in scalable planar devices. Here, we report narrow-line-width alternating-current electroluminescence (ACEL) from localized states in monolayer WSe2 using a lithographically defined sub-5 nm Au/Pt nanogap on SiO2/Si at 3.5 K. The curved nanogap geometry produces a nonuniform strain landscape and regions of enhanced electric field that may influence the local electronic environment. Under square-wave gate excitation, the device exhibits a spectrally isolated ACEL line at 1.652 eV with an apparent fitted line width of approximately 2 meV, in contrast to broad, multipeak photoluminescence from the same device. Spectral decomposition identifies dominant ZPL-like and weaker red-shifted sideband-like contributions. This nanogap architecture provides a scalable planar platform for narrow-line-width, electrically driven localized emission in two-dimensional materials.
SN  - 1530-6984
SN  - 1530-6992
ER  -