Enhancing the Stability of Ag/CH3NH3PbBr3 Interfaces via AgBr Doping
5 affiliations
- 1National Key Laboratory of Aerospace Mechanism, Nanjing University of Aeronautics and Astronautics, Nanjing 210016, China
- 2College of Physics, Nanjing University of Aeronautics and Astronautics, Nanjing 210016, China
- 3Shanghai Institute of Spacecraft Equipment, Shanghai 200240, China
- 4Shanghai Aerospace Equipments Manufacturer Co., Ltd., Shanghai 200245, China
- 5Key Laboratory of Semiconductor Display Materials and Chips, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215123, China
Abstract
While CH3NH3PbBr3 (MAPbBr3) single crystals exhibit exceptional potential for biased X/γ-ray detection, achieving a stable metal–semiconductor contact remains a critical challenge. Herein, we address this issue by incorporating AgBr as a dopant into pristine MAPbBr3 single crystals prior to Ag electrode deposition. Our results reveal a concentration-dependent interfacial mechanism: while low-level doping introduces excess Br− ions and Pb vacancies that accelerate electrochemical corrosion, a high concentration of Ag+ within the lattice effectively suppresses the deleterious reaction between the Ag electrode and the perovskite. This work establishes a defect-engineering strategy to stabilize metal electrodes, offering a viable pathway for the development of reliable, high-performance MAPbBr3-based radiation detectors.
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BibTeX
@article{wang2026enhancing,
title = {{Enhancing the Stability of Ag/CH3NH3PbBr3 Interfaces via AgBr Doping}},
author = {Chao Wang and Aiwu Yu and Yuzhu Pan and Yulian Zhang and Jinbao Chen and Xin Wang},
journal = {Nanomaterials},
year = {2026},
month = oct,
doi = {10.3390/nano16211379},
url = {https://www.mdpi.com/2079-4991/16/21/1379},
note = {CC BY 4.0},
}
RIS
TY - JOUR
TI - Enhancing the Stability of Ag/CH3NH3PbBr3 Interfaces via AgBr Doping
AU - Chao Wang
AU - Aiwu Yu
AU - Yuzhu Pan
AU - Yulian Zhang
AU - Jinbao Chen
AU - Xin Wang
PY - 2026
DA - 2026/10/28
JO - Nanomaterials
DO - 10.3390/nano16211379
UR - https://www.mdpi.com/2079-4991/16/21/1379
AB - While CH3NH3PbBr3 (MAPbBr3) single crystals exhibit exceptional potential for biased X/γ-ray detection, achieving a stable metal–semiconductor contact remains a critical challenge. Herein, we address this issue by incorporating AgBr as a dopant into pristine MAPbBr3 single crystals prior to Ag electrode deposition. Our results reveal a concentration-dependent interfacial mechanism: while low-level doping introduces excess Br− ions and Pb vacancies that accelerate electrochemical corrosion, a high concentration of Ag+ within the lattice effectively suppresses the deleterious reaction between the Ag electrode and the perovskite. This work establishes a defect-engineering strategy to stabilize metal electrodes, offering a viable pathway for the development of reliable, high-performance MAPbBr3-based radiation detectors.
SN - 2079-4991
ER -