Improved Hole Transport Layer Surface by Carbazole Ammonium Treatment for 988 nm Near‐Infrared Tin‐Lead Perovskite LEDs
- 1Zernike Institute for Advanced Materials University of Groningen Groningen The Netherlands
- 2Stratingh Institute for Chemistry University of Groningen Groningen The Netherlands
- 3imec imo‐imomec Diepenbeek Belgium
Abstract
Incorporating tin (Sn) and lead (Pb) into metal halide perovskites is an effective strategy for reducing bandgap energy, enabling applications in the near‐infrared (NIR) spectral region. Recently, we demonstrated light‐emitting diodes (LEDs) with long‐wavelength emission peaks exceeding 900 nm. However, non‐radiative recombination at the perovskite/transport layer interface remains a key limitation to device efficiency. In this work, we introduce carbazole ammonium iodide as an interfacial modifier, forming a hydrophilic thin layer atop the PEDOT:PSS hole transport layer. This interlayer enhances surface wettability, promotes improved perovskite crystallization, and facilitates better interface contact. The resulting perovskite films exhibit extended carrier lifetimes, and the corresponding NIR LEDs show reduced leakage current densities. Additionally, we systematically investigate the influence of annealing temperature on Sn–Pb‐based perovskite film formation. X‐ray diffraction (XRD) analysis reveals that high‐temperature annealing accelerates crystallization but promotes PbI2 formation, leading to rougher surfaces and increased crystal defects. By combining surface modification of the hole transport layer with optimized annealing conditions, we achieve a significant performance enhancement. The NIR LED with an emission peak at 988 nm exhibits a twofold increase in external quantum efficiency (EQE), improving from 0.6% to 1.3%, compared to devices using unmodified PEDOT:PSS.
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BibTeX
@article{chen2026improved,
title = {{Improved Hole Transport Layer Surface by Carbazole Ammonium Treatment for 988 nm Near‐Infrared Tin‐Lead Perovskite LEDs}},
author = {Jiale Chen and Jiaxiong Li and David Garcia Romero and Lijun Chen and Han Wang and Jane Kardula and Ryan Chiechi and Mordechai Kot and Wouter T. M. Van Gompel and Maria Antonietta Loi},
journal = {Advanced Electronic Materials},
year = {2026},
month = oct,
doi = {10.1002/aelm.70566},
url = {https://doi.org/10.1002/aelm.70566},
note = {CC BY},
}
RIS
TY - JOUR
TI - Improved Hole Transport Layer Surface by Carbazole Ammonium Treatment for 988 nm Near‐Infrared Tin‐Lead Perovskite LEDs
AU - Jiale Chen
AU - Jiaxiong Li
AU - David Garcia Romero
AU - Lijun Chen
AU - Han Wang
AU - Jane Kardula
AU - Ryan Chiechi
AU - Mordechai Kot
AU - Wouter T. M. Van Gompel
AU - Maria Antonietta Loi
PY - 2026
DA - 2026/10/26
JO - Advanced Electronic Materials
DO - 10.1002/aelm.70566
UR - https://doi.org/10.1002/aelm.70566
AB - Incorporating tin (Sn) and lead (Pb) into metal halide perovskites is an effective strategy for reducing bandgap energy, enabling applications in the near‐infrared (NIR) spectral region. Recently, we demonstrated light‐emitting diodes (LEDs) with long‐wavelength emission peaks exceeding 900 nm. However, non‐radiative recombination at the perovskite/transport layer interface remains a key limitation to device efficiency. In this work, we introduce carbazole ammonium iodide as an interfacial modifier, forming a hydrophilic thin layer atop the PEDOT:PSS hole transport layer. This interlayer enhances surface wettability, promotes improved perovskite crystallization, and facilitates better interface contact. The resulting perovskite films exhibit extended carrier lifetimes, and the corresponding NIR LEDs show reduced leakage current densities. Additionally, we systematically investigate the influence of annealing temperature on Sn–Pb‐based perovskite film formation. X‐ray diffraction (XRD) analysis reveals that high‐temperature annealing accelerates crystallization but promotes PbI2 formation, leading to rougher surfaces and increased crystal defects. By combining surface modification of the hole transport layer with optimized annealing conditions, we achieve a significant performance enhancement. The NIR LED with an emission peak at 988 nm exhibits a twofold increase in external quantum efficiency (EQE), improving from 0.6% to 1.3%, compared to devices using unmodified PEDOT:PSS.
SN - 2199-160X
ER -