Predictive wavelength tailoring of uniform GaSb-based quantum dots for emission at 1.55 um
Abstract
A detailed study of emission wavelength tailoring of GaSb-based QDs formed by InGaSb-filling of droplet-etched nanoholes in AlGaSb is presented. The study shows that the emission wavelength can be modified from 1.48 um to the center of the telecom C-band at 1.55 mm by independently varying the QD composition and size. More specifically, the optical transition energy shifts linearly as a function of In-content of the QD material at a rate of -4.4 meV/In-percentage, and with the number of monolayers (ML) of material used for filling the nanoholes, at -2.0 meV/ML. These experimentally observed energy shifts are well predicted by simulations yielding rates of -4.3 meV/In-percentage and -2.1 meV/ML, respectively. For the simulation, a uniform In composition, low intermixing, and microscopically measured QD geometry is considered. Additionally, excellent ensemble QD uniformity, with unprecedented inhomogeneous broadening well-below 7 meV across all samples is demonstrated. Finally, photoluminescence of single-QDs reveals narrow excitonic emission lines of 13.8+/-6.7 ueV and low fine-structure splitting values reaching <10 ueV. These results identify GaSb-based LDE QDs as a tunable telecom platform for scaling quantum-photonic applications over long-haul optical fiber networks.
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BibTeX
@misc{peil2026predictive,
title = {{Predictive wavelength tailoring of uniform GaSb-based quantum dots for emission at 1.55 um}},
author = {Markus Peil and Maja Wasiluk and Ziemowit Olinkiewicz and Tymon Przychodni and Robert Matysiak and Teemu Taskinen and Joona Salonen and Abhiroop Chellu and Metin Patli and Joonas Hilska and Anna Musiał and Michał Gawełczyk and Mircea Guina and Teemu Hakkarainen},
howpublished = {arXiv},
year = {2026},
month = aug,
doi = {10.48550/arxiv.2608.30628},
eprint = {2608.30628},
archivePrefix = {arXiv},
url = {https://arxiv.org/abs/2608.30628},
note = {CC BY-SA 4.0},
}
RIS
TY - UNPB
TI - Predictive wavelength tailoring of uniform GaSb-based quantum dots for emission at 1.55 um
AU - Markus Peil
AU - Maja Wasiluk
AU - Ziemowit Olinkiewicz
AU - Tymon Przychodni
AU - Robert Matysiak
AU - Teemu Taskinen
AU - Joona Salonen
AU - Abhiroop Chellu
AU - Metin Patli
AU - Joonas Hilska
AU - Anna Musiał
AU - Michał Gawełczyk
AU - Mircea Guina
AU - Teemu Hakkarainen
PY - 2026
DA - 2026/08/31
PB - arXiv
DO - 10.48550/arxiv.2608.30628
UR - https://arxiv.org/abs/2608.30628
AB - A detailed study of emission wavelength tailoring of GaSb-based QDs formed by InGaSb-filling of droplet-etched nanoholes in AlGaSb is presented. The study shows that the emission wavelength can be modified from 1.48 um to the center of the telecom C-band at 1.55 mm by independently varying the QD composition and size. More specifically, the optical transition energy shifts linearly as a function of In-content of the QD material at a rate of -4.4 meV/In-percentage, and with the number of monolayers (ML) of material used for filling the nanoholes, at -2.0 meV/ML. These experimentally observed energy shifts are well predicted by simulations yielding rates of -4.3 meV/In-percentage and -2.1 meV/ML, respectively. For the simulation, a uniform In composition, low intermixing, and microscopically measured QD geometry is considered. Additionally, excellent ensemble QD uniformity, with unprecedented inhomogeneous broadening well-below 7 meV across all samples is demonstrated. Finally, photoluminescence of single-QDs reveals narrow excitonic emission lines of 13.8+/-6.7 ueV and low fine-structure splitting values reaching <10 ueV. These results identify GaSb-based LDE QDs as a tunable telecom platform for scaling quantum-photonic applications over long-haul optical fiber networks.
ER -