High-temperature piezoresistive C / SiOC sensors
Abstract
Here we report on the high-temperature piezoresistivity of carbon-containing silicon oxycarbide nanocomposites (C / SiOC). Samples containing 13.5 vol% segregated carbon have been prepared from a polysilsesquioxane via thermal cross-linking, pyrolysis and subsequent hot-pressing. Their electrical resistance was assessed as a function of the mechanical load (1–10 MPa) and temperature (1000–1200 °C). The piezoresistive behavior of the C / SiOC nanocomposites relies on the presence of dispersed nanocrystalline graphite with a lateral size ≤ 2 nm and non-crystalline carbon domains, as revealed by Raman spectroscopy. In comparison to highly ordered carbon (graphene, HOPG), C / SiOC exhibits strongly enhanced k factor values, even upon operation at temperatures beyond 1000 °C. The measured k values of about 80 ± 20 at the highest temperature reading (T = 1200 °C) reveal that C / SiOC is a primary candidate for high-temperature piezoresistive sensors with high sensitivity.
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BibTeX
@article{roth2026hightemperature,
title = {{High-temperature piezoresistive C / SiOC sensors}},
author = {F. Roth and C. Schmerbauch and E. Ionescu and N. Nicoloso and O. Guillon and R. Riedel},
journal = {Journal of Sensors and Sensor Systems},
year = {2026},
month = oct,
doi = {10.5194/jsss-4-133-2015},
url = {https://hal.science/hal-05789990v1},
note = {CC BY},
}
RIS
TY - JOUR
TI - High-temperature piezoresistive C / SiOC sensors
AU - F. Roth
AU - C. Schmerbauch
AU - E. Ionescu
AU - N. Nicoloso
AU - O. Guillon
AU - R. Riedel
PY - 2026
DA - 2026/10/09
JO - Journal of Sensors and Sensor Systems
DO - 10.5194/jsss-4-133-2015
UR - https://hal.science/hal-05789990v1
AB - Here we report on the high-temperature piezoresistivity of carbon-containing silicon oxycarbide nanocomposites (C / SiOC). Samples containing 13.5 vol% segregated carbon have been prepared from a polysilsesquioxane via thermal cross-linking, pyrolysis and subsequent hot-pressing. Their electrical resistance was assessed as a function of the mechanical load (1–10 MPa) and temperature (1000–1200 °C). The piezoresistive behavior of the C / SiOC nanocomposites relies on the presence of dispersed nanocrystalline graphite with a lateral size ≤ 2 nm and non-crystalline carbon domains, as revealed by Raman spectroscopy. In comparison to highly ordered carbon (graphene, HOPG), C / SiOC exhibits strongly enhanced k factor values, even upon operation at temperatures beyond 1000 °C. The measured k values of about 80 ± 20 at the highest temperature reading (T = 1200 °C) reveal that C / SiOC is a primary candidate for high-temperature piezoresistive sensors with high sensitivity.
SN - 2194-8771
ER -