Interfacial polarity control of anomalous Hall effect in LaCoO3-SrIrO3 heterostructures
Abstract
Interfacial polarity in oxide heterostructures can drive robust charge redistribution across the interface, yet its role in tailoring topological transport phenomena like the anomalous Hall effect (AHE) remains largely unexplored. Here, we control the sign of polarity-induced charge in SrIrO3-LaCoO3 interfaces by independently engineering the layer stacking sequence and the atomic termination. In-situ angle-resolved photoemission spectroscopy directly confirms the sign reversal of the induced charge in SrIrO3 through the contrasting electronic band shifts between different interfacial configurations. Magneto-transport measurements across a systematic matrix of four distinct heterostructures reveal that the AHE can be cleanly toggled on and off: it emerges exclusively under electron-doped conditions, while remaining suppressed for hole-doped SrIrO3. Our results establish that this response originates from an intrinsic, Berry-curvature-driven mechanism governed by polarity-controlled band filling of SrIrO3. These findings shift interfacial polarity from a passive structural consequence to an active design variable for engineering topological quantum states in oxide heterostructures.
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BibTeX
@misc{lee2026interfacial,
title = {{Interfacial polarity control of anomalous Hall effect in LaCoO3-SrIrO3 heterostructures}},
author = {Yeonjae Lee and Chanyoung Shin and Youngdo Kim and Jinyoung Kim and Jaeung Lee and Miyoung Kim and Sangjae Lee and Changyoung Kim},
howpublished = {arXiv},
year = {2026},
month = nov,
doi = {10.48550/arxiv.2611.07501},
eprint = {2611.07501},
archivePrefix = {arXiv},
url = {https://arxiv.org/abs/2611.07501},
}
RIS
TY - UNPB
TI - Interfacial polarity control of anomalous Hall effect in LaCoO3-SrIrO3 heterostructures
AU - Yeonjae Lee
AU - Chanyoung Shin
AU - Youngdo Kim
AU - Jinyoung Kim
AU - Jaeung Lee
AU - Miyoung Kim
AU - Sangjae Lee
AU - Changyoung Kim
PY - 2026
DA - 2026/11/05
PB - arXiv
DO - 10.48550/arxiv.2611.07501
UR - https://arxiv.org/abs/2611.07501
AB - Interfacial polarity in oxide heterostructures can drive robust charge redistribution across the interface, yet its role in tailoring topological transport phenomena like the anomalous Hall effect (AHE) remains largely unexplored. Here, we control the sign of polarity-induced charge in SrIrO3-LaCoO3 interfaces by independently engineering the layer stacking sequence and the atomic termination. In-situ angle-resolved photoemission spectroscopy directly confirms the sign reversal of the induced charge in SrIrO3 through the contrasting electronic band shifts between different interfacial configurations. Magneto-transport measurements across a systematic matrix of four distinct heterostructures reveal that the AHE can be cleanly toggled on and off: it emerges exclusively under electron-doped conditions, while remaining suppressed for hole-doped SrIrO3. Our results establish that this response originates from an intrinsic, Berry-curvature-driven mechanism governed by polarity-controlled band filling of SrIrO3. These findings shift interfacial polarity from a passive structural consequence to an active design variable for engineering topological quantum states in oxide heterostructures.
ER -