A physics-informed uncertainty-aware surrogate for p-n junction diodes
Abstract
We develop an uncertainty-aware physics-informed surrogate for a one-dimensional p-n junction diode, conditioned on device length, doping and bias. Using the internal state of the device as predicted by the surrogate we develop a test-suite of quantities of interest including the terminal current, depletion width, peak field and stored charge. The formalism and the quantities are can be extended to asymmetric junction and two-dimensional diodes as shown by means of benchmark analysis. For the one-dimensional symmetric junction surrogate, we obtain 0.11% median L1 error on the electrostatic potential, and 1.5% and 0.61% on the electron and hole densities. Finally, we develop an uncertainty analysis which determines the validity of surrogate answer within the user-specified tolerance.
Related
- Physics-Informed Neural Network Surrogate for Oxygen Vacancy Dynamics in epitaxial SrTiO3 on Si memristors via Dynamic Spectral Optimization
- Experimental validation of a fast control-oriented, physics-informed surrogate model for plasma equilibrium reconstruction in the TCV tokamak
- A Gaussian-Process Surrogate for Control Rod Worth with Calibrated Uncertainty: Application to VERA Core Physics Benchmark Problem 4
- ChemODE: A Physics-Informed Neural Surrogate for Robust Pharmacokinetics and Biochemical Dynamics
- Physics-Informed Surrogate for Sb2S3 Dispersion Trimming in Thin-Film Lithium Niobate
BibTeX
@misc{kulkarni2026physicsinformed,
title = {{A physics-informed uncertainty-aware surrogate for $p$-$n$ junction diodes}},
author = {Suchita Kulkarni},
howpublished = {arXiv},
year = {2026},
month = oct,
doi = {10.48550/arxiv.2610.39993},
eprint = {2610.39993},
archivePrefix = {arXiv},
url = {https://arxiv.org/abs/2610.39993},
note = {CC BY 4.0},
}
RIS
TY - UNPB
TI - A physics-informed uncertainty-aware surrogate for p-n junction diodes
AU - Suchita Kulkarni
PY - 2026
DA - 2026/10/29
PB - arXiv
DO - 10.48550/arxiv.2610.39993
UR - https://arxiv.org/abs/2610.39993
AB - We develop an uncertainty-aware physics-informed surrogate for a one-dimensional p-n junction diode, conditioned on device length, doping and bias. Using the internal state of the device as predicted by the surrogate we develop a test-suite of quantities of interest including the terminal current, depletion width, peak field and stored charge. The formalism and the quantities are can be extended to asymmetric junction and two-dimensional diodes as shown by means of benchmark analysis. For the one-dimensional symmetric junction surrogate, we obtain 0.11% median L_1 error on the electrostatic potential, and 1.5% and 0.61% on the electron and hole densities. Finally, we develop an uncertainty analysis which determines the validity of surrogate answer within the user-specified tolerance.
ER -